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5 March 2022 Emission uniformity of UVC laser diodes on AlN substrates
Maki Kushimoto, Ziyi Zhang, Yoshio Honda, Leo J. Schowalter, Chiaki Sasaoka, Hiroshi Amano
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Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120010L (2022) https://doi.org/10.1117/12.2604370
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
Deep-ultraviolet laser diodes have achieved pulsed lasing at room temperature by improving the crystal quality and establishing a hole injection method using polarization doping techniques. In the initial demonstration, the threshold current density was very high at 25kA/cm2, which is a major barrier to continuous-wave lasing. The reason for this high threshold current density was found to be process-induced non-uniformity of emission. By suppressing this non-uniformity through LD device design, we were able to significantly reduce the threshold current density to about 12 kA/cm2.
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Maki Kushimoto, Ziyi Zhang, Yoshio Honda, Leo J. Schowalter, Chiaki Sasaoka, and Hiroshi Amano "Emission uniformity of UVC laser diodes on AlN substrates", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120010L (5 March 2022); https://doi.org/10.1117/12.2604370
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KEYWORDS
Semiconductor lasers
Aluminum nitride
Crystals
Deep ultraviolet
Heat treatments
Doping
Laser crystals
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