Semiconductor metasurfaces in strong optical fields

Maxim R. Shcherbakov

doi:10.1117/12.2653145

3 October 2022 Semiconductor metasurfaces in strong optical fields

Maxim R. Shcherbakov

Proceedings Volume PC12200, Low-Dimensional Materials and Devices 2022; PC122000E (2022) https://doi.org/10.1117/12.2653145
Event: SPIE Nanoscience + Engineering, 2022, San Diego, California, United States

Abstract

Enabled by designer local field patterns and electromagnetic modes, photonic metasurfaces have provided unprecedented control over light wave propagation. We summarize recent developments in light-matter interactions in the strong-field regime in semiconductor (Si, Ge, GaAs, GaP) metasurfaces. We will discuss high-efficiency optical harmonic generation and ultrafast all-optical switching, with an outlook toward novel optoelectronic devices and material platforms.

Conference Presentation

Citation Download Citation

Maxim R. Shcherbakov "Semiconductor metasurfaces in strong optical fields ", Proc. SPIE PC12200, Low-Dimensional Materials and Devices 2022, PC122000E (3 October 2022); https://doi.org/10.1117/12.2653145

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