Poster
26 September 2022 Ink formulations for solution-processable organic photodiodes to deposit homogeneous layers on >6-inch silicon wafers for organic CMOS image sensors
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Conference Poster
Abstract
We report ink formulations for solution-processable near-infrared organic photodiodes (OPDs) to fabricate organic CMOS image sensors on silicon wafers. The ink for the hole transport layer, which consists of cross-linkable semiconducting polymers, fully covers an 8-inch silicon wafer with less than 3 nm of variation in thickness by spin-coating. The ink is stable over several months. For the ink for the active layer, new additives are found to reduce micrometer size phase separation of donor and acceptor semiconductors after thermal annealing, which is fatal to achieve pixel to pixel reproducibility. Both inks are free from halogenated solvents.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hidenori Nakayama, Kazuhiro Nakabayashi, Shigeru Nakane, Yasuo Miyata, Kazuhiro Mouri, and Izuru Takei "Ink formulations for solution-processable organic photodiodes to deposit homogeneous layers on >6-inch silicon wafers for organic CMOS image sensors", Proc. SPIE PC12209, Organic, Hybrid, and Perovskite Photovoltaics XXIII, PC122090V (26 September 2022); https://doi.org/10.1117/12.2631670
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KEYWORDS
Semiconducting wafers

Silicon

Photodiodes

CMOS sensors

Active remote sensing

Biological and chemical sensing

Coating

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