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11 November 2022 EUV interference lithography: impact of mask roughness on feature patterning
Timothée P. Allenet, Iacopo Mochi
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Proceedings Volume PC12292, International Conference on Extreme Ultraviolet Lithography 2022; PC1229207 (2022) https://doi.org/10.1117/12.2641835
Event: SPIE Photomask Technology + EUV Lithography, 2022, Monterey, California, United States
Abstract
EUV materials development is a key enabler of lithography and chip technologies progress altogether. At the XIL beamline of the Swiss Light Source synchrotron we use interference lithography to characterize EUV photoresist materials for high-NA EUV lithography. The beamline end station relies on transmission masks which consists in pairs of diffraction gratings printed by e-beam lithography on a thin Si3N4 membrane to generate periodic interference patterns. These patterns are used to expose a resist-coated wafer. The wafer is then developed and inspected with scanning electron microscopy to evaluate several metrics such as dose to size, resolution, roughness and defectivity. To obtain unbiased values of these metrics it is necessary to decorrelate resist effects from tool and aerial image artifacts. In this work we investigate the impact of mask grating quality on the latent aerial image using computer modeling and experimental data.
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Timothée P. Allenet and Iacopo Mochi "EUV interference lithography: impact of mask roughness on feature patterning", Proc. SPIE PC12292, International Conference on Extreme Ultraviolet Lithography 2022, PC1229207 (11 November 2022); https://doi.org/10.1117/12.2641835
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KEYWORDS
Lithography
Photomasks
Extreme ultraviolet
Extreme ultraviolet lithography
Image quality
Semiconducting wafers
Photoresist developing
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