Presentation
17 March 2023 Measurements of two-photon absorption coefficient of HVPE grown GaAsP wafers
Author Affiliations +
Abstract
Ternary GaAsP alloys, with up to 50% phosphorous content, were grown by hydride vapor phase heteroepitaxy on GaAs substrates, in thicknesses exceeding 0.5 mm. After polishing off the GaAs substrate, the two-photon absorption coefficient of the material was measured at wavelengths between 1064 and 1700 nm, using a tunable picosecond duration laser. Current challenges faced by orientation patterned GaAs crystals for high power MWIR generation are expected to be alleviated through the use of the ternary alloys due to the expected reduction in the two-photon absorption coefficient values.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shekhar Guha, Joel Murray, Shivashankar Vangala, and Vladimir Tassev "Measurements of two-photon absorption coefficient of HVPE grown GaAsP wafers", Proc. SPIE PC12405, Nonlinear Frequency Generation and Conversion: Materials and Devices XXII, PC124050N (17 March 2023); https://doi.org/10.1117/12.2651400
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KEYWORDS
Absorption

Semiconducting wafers

Gallium arsenide

Polishing

Heteroepitaxy

Picosecond phenomena

Tunable lasers

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