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Photonic power converters designed to operate in the telecommunications O-band were measured under non-uniform 1319 nm laser illumination. Two device architectures were studied, based on lattice-matched InGaAsP on an InP substrate and lattice-mismatched InGaAs grown on GaAs using a metamorphic buffer. The maximum measured efficiencies were 52.9% and 48.8% for the lattice-matched and -mismatched designs respectively. Both 5.4-mm2 devices were insensitive to the incident laser spot size for input powers of < 250 mW and exhibited better performance for larger spot sizes with more uniform illumination profiles at higher powers.
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Karin Hinzer, Meghan N. Beattie, Neda Nouri, Henning Helmers, Gavin Forcade, Christopher E. Valdivia, Oliver Höhn, Jacob J. Krich, "Strategies for high-performance O-band photonic power converters (Conference Presentation)," Proc. SPIE PC12416, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII, PC1241609 (10 March 2023); https://doi.org/10.1117/12.2653280