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21 March 2023 Influence of dislocation density and interfacial lattice mismatch on MOCVD-grown Be-doped GaN
Benjamin McEwen, Michael A. Reshchikov, Emma Rocco, Vincent Meyers, Alireza Lanjani, Oleksandr Andrieiev, Mykhailo Vorobiov, Denis O. Demchenko, F. Shadi Shahedipour-Sandvik
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2668384
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Interest in Be as a shallow acceptor in III-Nitrides is growing. Recently, we reported the first systematic study of MOCVD growth of GaN:Be. It is well known that impurities tend to segregate at threading dislocations in GaN. Despite the relatively high quality of MOCVD-grown GaN, lattice mismatch with foreign substrates such as sapphire usually results in dislocation density on the order of 108 cm-2. In this study, we investigate the impact of substrate quality on the GaN:Be. The effects of the substrate lattice mismatch and dislocation density on total Be incorporation, optical characteristics, and Be activation efficiency are discussed.
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Benjamin McEwen, Michael A. Reshchikov, Emma Rocco, Vincent Meyers, Alireza Lanjani, Oleksandr Andrieiev, Mykhailo Vorobiov, Denis O. Demchenko, and F. Shadi Shahedipour-Sandvik "Influence of dislocation density and interfacial lattice mismatch on MOCVD-grown Be-doped GaN", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2668384
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KEYWORDS
Gallium nitride
Beryllium
Metalorganic chemical vapor deposition
Sapphire
Chemical vapor deposition
Dopants
Electrical conductivity
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