The making of oxide semiconductors by decomposition of carbon dioxide (Conference Presentation)

Henryk Teisseyre; Tomasz Andryszewski; Wiktoria Zajkowska; Jan Suffczyński; Krzysztof Fronc; Marcin Stachowicz; Slawomir Kret

doi:10.1117/12.2661351

16 March 2023 The making of oxide semiconductors by decomposition of carbon dioxide (Conference Presentation)

Henryk Teisseyre, Tomasz Andryszewski, Wiktoria Zajkowska, Jan Suffczyński, Krzysztof Fronc, Marcin Stachowicz, Slawomir Kret

Author Affiliations +

Proceedings Volume PC12422, Oxide-based Materials and Devices XIV; PC124220J (2023) https://doi.org/10.1117/12.2661351
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Recently, oxide semiconductors have attracted tremendous attention due to their applications in various fields from UV emitters, power electronics, nano-sensors and optoelectronics. Furthermore, global warming forces new solutions to limit greenhouse gas emissions and mitigate the negative effects of climate change. By performing thermodynamic calculations based on free-Gibbs energy and equilibrium constants of seven theoretical reactions for two oxides systems ZnO and Ga2O3, we confirm that such semiconductors could be grown by decomposition of carbon dioxide. In addition, we present a modified carbothermal method of growing ZnO nanowires. Nanowires obtained by us display excellent structural and optical properties with FWHM of photoluminescence at T = 8 K from donor bound exciton equal to 0.5 meV. We strongly believe that our modified carbothermal method is an analog of the growth process of large ZnO bulk crystals, which occurred previously in the Olawa foundry in Poland.

Conference Presentation

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Henryk Teisseyre, Tomasz Andryszewski, Wiktoria Zajkowska, Jan Suffczyński, Krzysztof Fronc, Marcin Stachowicz, and Slawomir Kret "The making of oxide semiconductors by decomposition of carbon dioxide (Conference Presentation)", Proc. SPIE PC12422, Oxide-based Materials and Devices XIV, PC124220J (16 March 2023); https://doi.org/10.1117/12.2661351

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KEYWORDS

Oxides

Semiconductors

Climate change

Electronics

Optoelectronics

Optical testing

Pollution control

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