Presentation
17 March 2023 Heterogeneous III-V nanowire quantum emitters on silicon photonic circuits
Author Affiliations +
Abstract
We show by numerical modelling how geometrical parameters of a NW and Si-WG design influence the spontaneous emission enhancement of the QD emitter and the in-coupling efficiencies at the NW-WG interface. First experiments towards the development of an integrated III-V NW-QD system are then presented. Here, we demonstrate a droplet-free site-selective epitaxy of vertical-cavity NW waveguides, where good control of GaAsSb/InGaAs axial heterostructures and their distinct luminescence properties are demonstrated. We also discuss control of Indium incorporation into the InGaAs axial segment, to tune the emission wavelength before optimizing the axial size, progressing towards an axial QD.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hyowon Jeong, Akhil Ajay, Nitin Mukhundhan, Markus Döblinger, Jonathan J. Finley, and Gregor Koblmüller "Heterogeneous III-V nanowire quantum emitters on silicon photonic circuits", Proc. SPIE PC12430, Quantum Sensing and Nano Electronics and Photonics XIX, PC124300H (17 March 2023); https://doi.org/10.1117/12.2648953
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KEYWORDS
Nanowires

Silicon photonics

Heterojunctions

Quantum dots

Waveguides

Optical properties

Photonic integrated circuits

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