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17 March 2023 Development of AlGaN-based laser diodes in the UV-A to UV-B regions
Motoaki Iwaya, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake
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Proceedings Volume PC12440, Novel In-Plane Semiconductor Lasers XXII; PC1244005 (2023) https://doi.org/10.1117/12.2647243
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
UV lasers have a wide range of applications in engineering, environment, medicine, biotechnology, and other fields. According to the “Report on Patent Application Technology Trend”, the market size is extremely large at approximately two billion US dollars a year. AlGaN is the most suitable material for the realization of UV Laser Diodes (LDs) because of its direct-transition band structure and high-performance UV LEDs. On the other hand, it has been considered extremely difficult to realize high-quality crystals that can achieve high optical gain with low carrier injection, and to simultaneously form the current injection and optical cavity required for laser oscillation. In this presentation, I would like to introduce our UV-B and UV-A LDs. These LDs have achieved breakthroughs in the above issues by realizing high quality AlGaN with lattice relaxation by 3D growth and by using polarized doping structures in the p-type cladding layer. I would like to explain its technical details and future prospects.
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Motoaki Iwaya, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, and Hideto Miyake "Development of AlGaN-based laser diodes in the UV-A to UV-B regions", Proc. SPIE PC12440, Novel In-Plane Semiconductor Lasers XXII, PC1244005 (17 March 2023); https://doi.org/10.1117/12.2647243
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KEYWORDS
Semiconductor lasers
Laser development
Ultraviolet radiation
Doping
Laser applications
Laser crystals
Medicine
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