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30 April 2023 High NA EUV: development towards introduction at the customer
Rudy Peeters
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Proceedings Volume PC12494, Optical and EUV Nanolithography XXXVI; PC1249404 (2023) https://doi.org/10.1117/12.2658381
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States
Abstract
To enable further cost-effective scaling of technology nodes, the next generation EUV platform has been developed with an increase of the numerical aperture (NA) from 0.33NA to 0.55NA. This next generation EUV platform is called High NA and is an evolutionary step for EUV technology. High NA EUV will bring multiple benefits to the semiconductor market such as reduction of process complexity, yield improvement, higher resolution enabling printability of smaller features at increased density, and cost of technology reduction. The development of High NA is done in several phases. First we develop and qualify High NA modules. Next we build subsystems that can be independently pre-qualified. And finally we will build those pre-qualified subsystems into High NA scanner systems that will be shipped to customers.
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Rudy Peeters "High NA EUV: development towards introduction at the customer", Proc. SPIE PC12494, Optical and EUV Nanolithography XXXVI, PC1249404 (30 April 2023); https://doi.org/10.1117/12.2658381
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KEYWORDS
Extreme ultraviolet
Scanners
Semiconductors
Yield improvement
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