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5 October 2023 Integration of WSe2 with gate dielectrics: synthesis and interfaces
Stephen McDonnell, Maria Gabriela Sales, Sina Najmaei, Wendy Sarney, Alex Mazzoni
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Proceedings Volume PC12651, Low-Dimensional Materials and Devices 2023; PC126510D (2023) https://doi.org/10.1117/12.2683808
Event: SPIE Nanoscience + Engineering, 2023, San Diego, California, United States
Abstract
The integration of any new material into device architectures necessarily requires interfaces with dissimilar materials. In the case of semiconducting transition metal dichalcogenide (TMDCs) WSe2 the interface with a gate dielectric is extremely important. Presented will be our work on two approaches to WSe2 integration. The first considers the direct growth of WSe2 on and insulating substrate. Here we consider the impact of the WSe2 on the dielectric itself. In the second approach we investigate the deposition of dielectrics by atomic layer epitaxy onto WSe2 with a focus on enhancing nucleation and the considering the impact of surface functionalization on device performance
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Stephen McDonnell, Maria Gabriela Sales, Sina Najmaei, Wendy Sarney, and Alex Mazzoni "Integration of WSe2 with gate dielectrics: synthesis and interfaces", Proc. SPIE PC12651, Low-Dimensional Materials and Devices 2023, PC126510D (5 October 2023); https://doi.org/10.1117/12.2683808
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KEYWORDS
Dielectrics
Interfaces
Hafnium
Molecular beam epitaxy
Oxides
Selenium
Semiconductors
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