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13 March 2024 Comparison of second harmonic generation efficiency of orientation patterned GaAs, CdGeAs2, ZnGeP2 and AgGaSe2 using a pulsed CO2 laser
Shekhar Guha, Amelia Carpenter, Joel Murray, Alan Martinez, Kevin Zawilski, Peter G. Schunemann
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Proceedings Volume PC12869, Nonlinear Frequency Generation and Conversion: Materials and Devices XXIII; PC1286908 (2024) https://doi.org/10.1117/12.3005275
Event: SPIE LASE, 2024, San Francisco, California, United States
Abstract
Measurement of second harmonic generation efficiency of a 100 ns duration, 9.271 μm CO2 laser in orientation patterned GaAs (OPGaAs) crystal (3 mm x 7.5 mm x 39.7 mm), and in crystals of AgGaSe2, ZnGeP2 and CdGeAs2 in their largest dimensions currently available will be presented. At maximum fundamental beam fluence of 2.5 J/cm^2, 15 % conversion efficiency was achieved with the OPGaAs crystal, which was the highest among the materials studied in this work. All samples were at the ambient laboratory temperature of 23 C and the radius of the incident beam was 0.7 mm (HWe^(-1)M of intensity).
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Shekhar Guha, Amelia Carpenter, Joel Murray, Alan Martinez, Kevin Zawilski, and Peter G. Schunemann "Comparison of second harmonic generation efficiency of orientation patterned GaAs, CdGeAs2, ZnGeP2 and AgGaSe2 using a pulsed CO2 laser", Proc. SPIE PC12869, Nonlinear Frequency Generation and Conversion: Materials and Devices XXIII, PC1286908 (13 March 2024); https://doi.org/10.1117/12.3005275
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KEYWORDS
Carbon dioxide lasers
Second harmonic generation
Crystals
Gallium arsenide
Silver selenogallate
Continuous wave operation
Laser crystals
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