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12 March 2024 Microscopic-physics model for interface-roughness scattering and nonlinear electron transport in superlattice
Danhong Huang, Po-Hsin Shih, Godfrey Gumbs, Thi-Nga Do, Christian P. Morath, Tanya D. Maestas
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Proceedings Volume PC12880, Physics and Simulation of Optoelectronic Devices XXXII; PC1288003 (2024) https://doi.org/10.1117/12.2690859
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
In this presentation, we propose an effective scattering-potential approach for treating interface-roughness scattering of moving electrons in a superlattice structure. Based on obtained effective scattering potentials, we further derive a generalized Boltzmann transport equation by including a self-consistent internal scattering force. In addition, we solve this equation exactly beyond the relaxation-time approximation, and meanwhile, analyze the dependence of conduction current on interface-roughness parameters at various temperatures and DC electric fiield strengths. Finally, we reveal a microscopic mechanism associated with non-ohmic transport behavior by analyzing features in steady-state non-equilibrium electron occupation function and its dependence on interface roughness parameters.
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Danhong Huang, Po-Hsin Shih, Godfrey Gumbs, Thi-Nga Do, Christian P. Morath, and Tanya D. Maestas "Microscopic-physics model for interface-roughness scattering and nonlinear electron transport in superlattice", Proc. SPIE PC12880, Physics and Simulation of Optoelectronic Devices XXXII, PC1288003 (12 March 2024); https://doi.org/10.1117/12.2690859
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KEYWORDS
Scattering
Electron transport
Superlattices
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