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9 March 2024 Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
Yvon Cordier, Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Eric Frayssinet, Stéphane Vézian
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128860N (2024) https://doi.org/10.1117/12.3007453
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
The sublimation of GaN is a powerful alternative etching technique to avoid the electrical traps usually induced by dry etching. It is selective towards Al containing alloys such as AlGaN and towards dielectric materials like silicon oxide or silicon nitride so that patterns can be defined to fabricate devices based on GaN/AlGaN heterostructures. In the present work, we report on the fabrication of enhancement mode p-GaN/Al(Ga)N/GaN high electron mobility transistors (HEMTs) with selective area sublimation under vacuum of the p-GaN cap layer used to define the gate. Furthermore, we show that sublimation can be combined with the regrowth of AlGaN, which is a key to increase the maximum drain current in the transistors and enables the co-integration of enhancement mode devices with depletion mode ones.
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Yvon Cordier, Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Eric Frayssinet, and Stéphane Vézian "Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128860N (9 March 2024); https://doi.org/10.1117/12.3007453
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KEYWORDS
Aluminum gallium nitride
Transistors
Fabrication
Field effect transistors
Gallium nitride
Heterojunctions
Oxides
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