CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume PC12886 > Article
Presentation
9 March 2024 Full InGaN red emission on different InGaN pseudo-substrates for native full color micro-displays
Amélie Dussaigne, Frederic Barbier, Patrick Le Maitre, Helge Haas, Jean-Christophe Pillet, Guillaume Veux, Colin Paillet, Adeline Grenier, Névine Grenier, Zineb Saghi, Audrey Jannaud, Adrien Michon, Stéphane Vézian, Benjamin Damilano, Bérangère Hyot
Author Affiliations +
Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC1288611 (2024) https://doi.org/10.1117/12.3003161
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
To fabricate native and monolithic full color micro-displays with a pixel pitch below 10 µm, the three primary colors should be achieved with the InGaN alloy. The prerequisite is to get an efficient red emission with thin InxGa1-xN quantum well (QW) width and an In content of 35%. However, the In content is limited to 25% when grown on GaN. A full InGaN structure combined with different types of relaxed InGaN pseudo-substrates are used to reduce the strain in the active zone. Red electroluminescence was obtained until 650 nm. Homogeneous red emitting InGaN based QWs were also demonstrated.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Amélie Dussaigne, Frederic Barbier, Patrick Le Maitre, Helge Haas, Jean-Christophe Pillet, Guillaume Veux, Colin Paillet, Adeline Grenier, Névine Grenier, Zineb Saghi, Audrey Jannaud, Adrien Michon, Stéphane Vézian, Benjamin Damilano, and Bérangère Hyot "Full InGaN red emission on different InGaN pseudo-substrates for native full color micro-displays", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC1288611 (9 March 2024); https://doi.org/10.1117/12.3003161
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Indium gallium nitride
Quantum wells
Electroluminescence
Crystals
Diodes
Electric fields
Indium nitride
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top