Presentation
13 March 2024 The next phase of all silicon electro-optical modulators
Author Affiliations +
Proceedings Volume PC12891, Silicon Photonics XIX; PC1289109 (2024) https://doi.org/10.1117/12.2691582
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Integrated electro-optic modulators offer huge potential to meet communications and computations' rapidly growing bandwidth requirements. Devices based on silicon allow high-volume, low-cost CMOS fabrication, and co-integration with the CMOS circuits. They are promising candidates for mass-producible Tb/s-scale inter-rack and intra-rack interconnects. This talk will focus on our advancement of silicon-based optical modulators: (1) miniaturized all silicon MOSCAP modulators for co-packaged optics and its integration with low voltage drivers, allowing low optical power consumption of 2 pJ/bit. (2) Novel carrier absorption enhanced electro-optical modulation in MOSCAP ring resonators towards integration with ultra-low voltage (<1V) CMOS drivers; (3) Carrier depletion ring unity device for large scale and high bandwidth density error-free links; (4) Linear DC-Kerr effect dominated silicon modulators towards lidar and quantum applications.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Weiwei Zhang, Martin Ebert, Ke Li, Bigeng Chen, Xingzhao Yan, Han Du, Mehdi Banakar, Dehn T. Tran, Callum G. Littlejohns, Graham Reed, and David Thomson "The next phase of all silicon electro-optical modulators", Proc. SPIE PC12891, Silicon Photonics XIX, PC1289109 (13 March 2024); https://doi.org/10.1117/12.2691582
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KEYWORDS
Silicon

Modulation

Electro optics

Electrooptic modulators

Molybdenum

Transmitters

Power consumption

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