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13 March 2024 Optimization of GaSb buffer layers on silicon substrates for optoelectronic applications
Mega D. Frost, Fatih F. Ince, Darryl M. Shima, Thomas J. Rotter, Ganesh Balakrishnan
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Proceedings Volume PC12891, Silicon Photonics XIX; PC128910A (2024) https://doi.org/10.1117/12.3002723
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
In this work we investigate the application and optimization of GaSb buffers on Silicon for improved device performance in the mid-wave infrared (MWIR). In particular, we examine the nucleation process of AlSb to create a template for growth of the GaSb buffer, as well as the use of defect filtering layers for reducing residual threading dislocations in the buffer layer. The location of the defect filtering layer plays a role in its effectiveness. Threading dislocation densities as low as mid-10^7 defects/cm^2 have been achieved. This study includes analysis from photoluminescence spectroscopy, transmission electron microscopy, temperature-dependent x-ray diffraction studies, and x-ray diffraction reciprocal space mapping.
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Mega D. Frost, Fatih F. Ince, Darryl M. Shima, Thomas J. Rotter, and Ganesh Balakrishnan "Optimization of GaSb buffer layers on silicon substrates for optoelectronic applications", Proc. SPIE PC12891, Silicon Photonics XIX, PC128910A (13 March 2024); https://doi.org/10.1117/12.3002723
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KEYWORDS
Gallium antimonide
Silicon
Optoelectronics
Tunable filters
Laser development
Mid-IR
Transmission electron microscopy
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