Optoelectronic devices operating in the extended short-wave infrared (e-SWIR) covering the 1.4-3.0 μm wavelength range provide valuable information that can not be gathered in the visible wavelengths. For instance, e-SWIR penetrates fog, haze, and smog. The current e-SWIR technologies utilize predominantly expensive III-V and II-VI semiconductors, hindering the large-scale use of e-SWIR devices. Herein, we introduce GeSn devices monolithically integrated on Si wafers as a low-cost, scalable, and CMOS-compatible e-SWIR technology. E-SWIR imaging through fog is demonstrated utilizing the grown GeSn PIN photodetectors. To record the images, focused light from a broadband source was directed through a silicon (Si) wafer and an artificial fog toward the GeSn photodetector. Using raster scanning and a single GeSn photodiode epitaxially grown on Si wafer, full images were composed. The latter showed a clear contrast between the illuminated and the dark zones. This capacity to properly detect objects through obscurants opens a range of opportunities for real-life applications in e-SWIR imaging.
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