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10 April 2024 Brightfield EUV imaging for hexagonal contact hole patterns: a feasibility study
Paulina A. Rincon-Delgadillo, Sara Paolillo, Joern-Holger Franke, Gijsbert Rispens
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Proceedings Volume PC12953, Optical and EUV Nanolithography XXXVII; PC129530E (2024) https://doi.org/10.1117/12.3010914
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States
Abstract
In this work, we compared the performance of BF imaging in combination with a spin-on MOR and DF with CAR to generate hexagonal contact holes and understand the advantages obtained with each patterning approach in terms of dose and LCDU. CH patterns of pitches 38 and 34 nm were generated using SE EUV and LCDU decomposition was done to identify the main contributors to LCDU for both cases. Since the inherent properties of both resists are significantly different, we transferred the patterns into a relevant layer to do the final comparison AEI at pitch 38nm.
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Paulina A. Rincon-Delgadillo, Sara Paolillo, Joern-Holger Franke, and Gijsbert Rispens "Brightfield EUV imaging for hexagonal contact hole patterns: a feasibility study", Proc. SPIE PC12953, Optical and EUV Nanolithography XXXVII, PC129530E (10 April 2024); https://doi.org/10.1117/12.3010914
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KEYWORDS
Extreme ultraviolet
Etching
Metrology
Printing
Stochastic processes
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