Applying area-selective atomic layer deposition for high-precision pattern transfer

Yujin Lee; Maggy Harake; Beihang Yu; Ricardo Ruiz; Stacey F. Bent

doi:10.1117/12.3012187

10 April 2024 Applying area-selective atomic layer deposition for high-precision pattern transfer

Yujin Lee, Maggy Harake, Beihang Yu, Ricardo Ruiz, Stacey F. Bent

Proceedings Volume PC12956, Novel Patterning Technologies 2024; PC129560T (2024) https://doi.org/10.1117/12.3012187
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

Industries use extreme ultraviolet (EUV) light sources with a wavelength of 13.5 nm to achieve sub-10 nm patterning capabilities. However, the stochastic limitations arising from the patterning processes are still considered a challenge to high-precision pattern transfer. We explore a unique approach combining area-selective atomic layer deposition (AS-ALD) and vapor phase infiltration (VPI) to fabricate a hard mask layer with atomic precision. In AS-ALD, tuning the precursor provides a variable for achieving selectivity. We develop Al2O3 and HfO2 ALD processes with various precursors and perform AS-ALD over patterned polypeptoid (PP) and polystyrene (PS) brushes as growth and non-growth areas, respectively. Results show that ALD can occur within the PP brushes, while PS brushes can inhibit the adsorption of the precursor. We introduce the effect of ALD precursor selection to achieve high-precision pattern transfer based on the chemical reactivity between ALD precursor and EUV-patterned materials.

Conference Presentation

Citation Download Citation

Yujin Lee, Maggy Harake, Beihang Yu, Ricardo Ruiz, and Stacey F. Bent "Applying area-selective atomic layer deposition for high-precision pattern transfer", Proc. SPIE PC12956, Novel Patterning Technologies 2024, PC129560T (10 April 2024); https://doi.org/10.1117/12.3012187

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