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4 October 2024 Magneto-resistive random access memory (MRAM) for space applications
Romney Katti
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Proceedings Volume PC13119, Spintronics XVII; PC131191D (2024) https://doi.org/10.1117/12.3029927
Event: Nanoscience + Engineering, 2024, San Diego, California, United States
Abstract
Magneto-resistive Random Access Memory (MRAM) serves as a reliable and robust non-volatile memory (NVM) for space data system memory and data storage applications. Such MRAMs use Magnetic Tunnel Junction (MTJ) bits in an MRAM Back-End-of-Line process integrated with radiation hardened CMOS transistors and metallization. High reliability and robust MRAMs for space applications result when holistic design practices are applied to technology developed holistically for space and radiation-hardened applications. Such MRAMs are radiation hardened for robust operation in radiation environments and also offer high levels of write and read cycling endurance, long data retention time, low error rate, wide operating temperature range, and long lifetimes over specified conditions. MRAMs have been qualified for space and QML applications including to MIL-PRF-38535 and MIL-STD-883 standards. Physical processes, principles of operation, and qualification methods and considerations will be described for high-reliability and robust MRAMs for space and radiation-hardened applications.
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Romney Katti "Magneto-resistive random access memory (MRAM) for space applications", Proc. SPIE PC13119, Spintronics XVII, PC131191D (4 October 2024); https://doi.org/10.1117/12.3029927
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KEYWORDS
Data storage
Design
Magnetic tunnel junctions
Reliability
Temperature metrology
Transistors
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