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Abstract
The range of extreme-ultraviolet (EUV) or soft X-ray radiation covers the spectrum of wavelengths between 5 and 30 nm. Similar to deep-ultraviolet (DUV) lithography with exposure wavelengths of 248 nm and 193 nm, EUV lithography uses a projection optics to create a demagnified image of a mask. The short wavelength of EUV lithography can provide significantly better resolution than DUV lithography. This improvement of the resolution capabilities and the similarity to established lithographic techniques made EUV lithography a very attractive successor of 193 nm immersion lithography.
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