Narrow-Gap Semiconductor Photodiodes

Author(s): Antoni Rogalski, Krzysztof Adamiec, Jaroslaw Rutkowski

Published: 2000

https://doi.org/10.1117/3.2536930

PDF ISBN: 9781510629943 | Print ISBN: 9780819436191

DESCRIPTION

This book, originally published December 5th, 2000, has been republished as an eBook October 21st, 2022.

In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.

Buy this book on SPIE.org

TABLE OF CONTENTS SHOW ALL CHAPTER OUTLINES +

SAVE THIS BOOK TO YOUR LIBRARY

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Front Matter

DOWNLOAD PDF

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

CHAPTER 1.

Introduction

Chapter Outline +

1.1 Historical background
1.2 General classification of IR detectors
1.3 General theory of photon detectors
References

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

CHAPTER 2.

Narrow-Gap Semiconductor Materials

Chapter Outline +

2.1 III–V materials
2.2 HgCdTe ternary alloy
2.2.1 Crystal growth
2.2.2 Defects and impurities
2.2.3 Semiconductor properties
2.3 Lead salts
2.3.1 Crystal growth
2.3.2 Defects and impurities
2.3.3 Some physical properties
2.4 Hg-based alternatives to HgCdTe
2.4.1 Crystal growth
2.4.2 Some physical properties
References

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

CHAPTER 3.

Generation-Recombination Processes: Carrier Lifetime

Chapter Outline +

3.1 Shockley-Read mechanism
3.2 Radiative mechanism
3.3 Auger mechanism
3.3.1 Band-to-band Auger mechanisms
3.3.2 Other Auger recombination mechanisms
3.4 Carrier lifetime in InSb and InAs
3.5 Carrier lifetime in InxGa1–xAs
3.6 Carrier lifetime in Hg1–xCdxTe
3.7 Carrier lifetime in lead salts
3.8 Carrier lifetimes in superlattices
3.8.1 HgTe/CdTe superlattices
3.8.2 InAs/Ga1–xInxSb strained layer superlattices
References

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

CHAPTER 4.

Operating Principles of Photodiodes

Chapter Outline +

4.1 p–n junction photodiodes
4.1.1 Ideal diffusion-limited p–n junctions
4.1.2 Real p–n junctions
4.1.3 Response time
4.2 Schottky barrier photodiodes
4.2.1 Schottky-Mott theory and its modifications
4.2.2 Current transport processes
4.3 MIS photodiodes
4.4 Non-equilibrium photodiodes
References

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

CHAPTER 5.

Focal Plane Arrays

Chapter Outline +

5.1 Overview of focal plane array architectures
5.2 Monolithic focal plane arrays
5.2.1 Charge-coupled devices
5.2.2 Charge injection devices
5.2.3 Charge imaging matrixes
5.2.4 Silicon FPAs: IT-CCD, CSD and MOS FPAs
5.2.5 Direct-charge-injection silicon FPAs
5.3 Hybrid focal plane arrays
5.3.1 Direct injection
5.3.2 Buffered direct injection
5.3.3 Gate modulation
5.4 Maturity, cost, applications and technology directions
References

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

CHAPTER 6.

III–V Photodiodes

Chapter Outline +

6.1 InSb photodiodes
6.2 InSb nonequilibrium photodiodes
6.3 InAs photodiodes
6.4 InAsSb photodiodes
6.5 InGaAs photodiodes
6.6 Focal plane arrays
6.6.1 Hybrid InSb/Si focal plane arrays
6.6.2 InSb charge injection devices
6.6.3 InSb charge-coupled devices
6.6.4 Hybrid InGaAs/Si focal plane arrays
References

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

CHAPTER 7.

HgCdTe Photodiodes

Chapter Outline +

7.1 Fundamental limitation to HgCdTe photodiode performance
7.2 Nonfundamental sources of dark current and noise
7.3 Technology
7.3.1 Hg in-diffusion
7.3.2 Ion milling
7.3.3 Ion implantation
7.3.4 Doping during growth
7.3.5 Other techniques
7.3.6 Passivation
7.3.7 Contact metallization
7.4 Properties of HgCdTe photodiodes
7.4.1 LWIR devices at low temperatures
7.4.2 LWIR devices at intermediate and ambient temperatures
7.4.3 MWIR photodiodes
7.4.4 SWIR photodiodes
7.5 Dual-band detectors
7.6 Non-equilibrium HgCdTe photodiodes
7.7 MIS photodiodes
7.8 Schottky barrier photodiodes
7.9 Focal plane arrays
7.9.1 Hybrid FPAs
7.9.2 Monolithic FPAs
References

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

CHAPTER 8.

HgZnTe and HgMnTe Photodiodes

Chapter Outline +

8.1 HgZnTe photodiodes
8.2 HgMnTe photodiodes
References

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

CHAPTER 9.

Lead Salt Photodiodes

Chapter Outline +

9.1 Photodiode performance
9.2 Technology and properties of p–n junction photodiodes
9.2.1 Diffused photodiodes
9.2.2 Ion implantation
9.2.3 Heterojunctions
9.3 Schottky-barrier photodiodes
9.4 Unconventional thin film photodiodes
9.5 Lead salts FPAs
References

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

CHAPTER 10.

Superlattice Photodiodes

Chapter Outline +

10.1 Superlattices—background
10.1.1 Confined electrons in relation to the quantum well
10.1.2 Classification of multiple quantum wells and superlattices
10.1.3 Superlattices for obtaining long wavelength absorption
10.2 HgTe/CdTe superlattice photodiodes
10.3 Strained layer superlattice photodiodes
10.3.1 InAsSb/InSb SLS photodiodes
10.3.2 InAs/GaInSb SLS photodiodes
References

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

Back Matter

DOWNLOAD PDF

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.