Special Section Guest Editorial: 3D Semiconductor Metrology

Ndubuisi George Orji; Qinghuang Lin

doi:10.1117/1.JMM.22.3.031201

9 August 2023 Special Section Guest Editorial: 3D Semiconductor Metrology

Ndubuisi George Orji, Qinghuang Lin

Journal of Micro/Nanopatterning, Materials, and Metrology, Vol. 22, Issue 3, 031201 (August 2023). https://doi.org/10.1117/1.JMM.22.3.031201

Abstract

Guest editors Ndubuisi George Orji and Qinghuang Lin introduce the Special Section on 3D Semiconductor Metrology.

Citation Download Citation

Ndubuisi George Orji and Qinghuang Lin "Special Section Guest Editorial: 3D Semiconductor Metrology," Journal of Micro/Nanopatterning, Materials, and Metrology 22(3), 031201 (9 August 2023). https://doi.org/10.1117/1.JMM.22.3.031201

Published: 9 August 2023

ACCESS THE FULL ARTICLE

JOURNAL ARTICLE
2 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

3D metrology

Metrology

Semiconductors

3D equipment

Transistors

Fin field effect transistors

Gallium arsenide

Show All Keywords

RELATED CONTENT

Semiconductor metrology for the 3D era
Proceedings of SPIE (January 01 1900)

7/5nm logic manufacturing capabilities and requirements of metrology
Proceedings of SPIE (March 22 2018)

CD AFM versus CD SEM for resist LER and LWR...
Proceedings of SPIE (March 24 2006)

Engineering On NPN AlGaAs Heterojunction Bipolar Transistors
Proceedings of SPIE (April 22 1987)

Stress-induced effects in semiconducting epitaxial layers
Proceedings of SPIE (April 17 2001)

Subscribe to Digital Library

Receive Erratum Email Alert

Show All Keywords

Keywords/Phrases

Search In:

Publication Years