29 March 2019 Characteristics of graphene/4H-SiC/graphene photodetector based on hydrogenated multilayer-graphene electrode
Cunzhi Sun, Weiwei Cai, Rongdun Hong, Jiafa Cai, Zhengyun Wu
Author Affiliations +
Abstract
By utilizing a Joule heating decomposition method, hydrogenated multilayer graphene (MLG) has been grown on the surface of a semi-insulation 4H-SiC epitaxial layer. The Raman spectra have indicated that the sublimation speed of Si atoms, which corresponds positively to the Joule heat, had great influence on the hydrogenation degree and the layer number of the MLG. Then, a graphene/4H-SiC/graphene photodetector was fabricated and studied, showing hydrogenation-dependent dark current and photocurrent, depicting the influence of hydrogenation degree and the layer number on the Schottky barrier high (varying from 0.59 to 0.99 eV). Moreover, the sheet resistance of MLG and the specific contact resistance of graphene/Cr/Au came out to be ∼3.2  kΩ  /  sq and 7.5  ×  10  −  3  Ω  ·  cm2.
© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE) 1934-2608/2019/$25.00 © 2019 SPIE
Cunzhi Sun, Weiwei Cai, Rongdun Hong, Jiafa Cai, and Zhengyun Wu "Characteristics of graphene/4H-SiC/graphene photodetector based on hydrogenated multilayer-graphene electrode," Journal of Nanophotonics 13(1), 016013 (29 March 2019). https://doi.org/10.1117/1.JNP.13.016013
Received: 18 October 2018; Accepted: 13 March 2019; Published: 29 March 2019
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Cited by 6 scholarly publications.
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KEYWORDS
Silicon carbide

Graphene

Resistance

Electrodes

Photodetectors

Raman spectroscopy

Chemical species

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