Optical NOR gate based on silicon technology

Alfonso Torres-Jacome; Francisco-J. Renero-Carrillo; Alicia Vera-Marquina

doi:10.1117/1.1403741

1 October 2001 Optical NOR gate based on silicon technology

Alfonso Torres-Jacome, Francisco-J. Renero-Carrillo, Alicia Vera-Marquina

Optical Engineering, Vol. 40, Issue 10, (October 2001). https://doi.org/10.1117/1.1403741

An optoelectronic integrated device that carries out digital optical functions is designed in silicon technology. The device achieves the NOR gate, which has input and output optical signals, and is designed to detect and emit a 600-nm-wavelength light. The active detection area is 1 mm2, and it can achieve frequencies of the order of megahertz.

©(2001) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Alfonso Torres-Jacome, Francisco-J. Renero-Carrillo, and Alicia Vera-Marquina "Optical NOR gate based on silicon technology," Optical Engineering 40(10), (1 October 2001). https://doi.org/10.1117/1.1403741

Published: 1 October 2001

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available