High-performance GaN-based light-emitting diodes on patterned sapphire substrate with a novel hybrid Ag mirror and atomic layer deposition-TiO2/Al2O3 distributed Bragg reflector backside reflector

Hao Guo; Hongjun Chen; Xiong Zhang; Peiyuan Zhang; Jianjun Liu; Honggang Liu; Yiping Cui

doi:10.1117/1.OE.52.6.063402

4 June 2013 High-performance GaN-based light-emitting diodes on patterned sapphire substrate with a novel hybrid Ag mirror and atomic layer deposition-TiO2/Al2O3 distributed Bragg reflector backside reflector

Hao Guo, Hongjun Chen, Xiong Zhang, Peiyuan Zhang, Jianjun Liu, Honggang Liu, Yiping Cui

Author Affiliations +

Optical Engineering, Vol. 52, Issue 6, 063402 (June 2013). https://doi.org/10.1117/1.OE.52.6.063402

Abstract

GaN-based light-emitting diodes (LED) on a patterned sapphire substrate with a novel hybrid atomic layer deposition (ALD)-TiO ₂ Al ₂ O ₃ distributed Bragg reflector (DBR) and Ag mirror have been proposed and fabricated. Due to the excellent thickness uniformity of ALD for the proposed reflector, high reflectivity over 99.3% at an incident angle of 5 deg has been achieved. It was also found that the reflectivity of a backside reflector with an Ag mirror slightly depends on incident light wavelength and incident angle. Moreover, because of the good adhesion between TiO ₂ /Al ₂ O ₃ DBR and the Ag mirror, the fabrication process was simplified and reliable. With a 60 mA current injection, an enhancement of 5.2%, 8.9%, and 47.1% in light output power (LOP) at the 460 nm wavelength was realized for the proposed LED with Ag mirror and 3-pair ALD-TiO ₂Al ₂O ₃ DBR as compared with a LED with a traditional Ag mirror and 3-pair TiO ₂ /SiO ₂ DBR, with Al mirror and 3-pair ALD-TiO₂Al₂ O ₃ DBR, and without backside reflector, respectively. This result shows that the ALD-TiO₂ /Al ₂O ₃ DBR can be used to enhance the LOP greatly and improve adhesion between the sapphire substrate and the metallic mirror, and thus is very promising for fabricating high performance GaN-based LEDs.

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Hao Guo, Hongjun Chen, Xiong Zhang, Peiyuan Zhang, Jianjun Liu, Honggang Liu, and Yiping Cui "High-performance GaN-based light-emitting diodes on patterned sapphire substrate with a novel hybrid Ag mirror and atomic layer deposition-TiO2/Al2O3 distributed Bragg reflector backside reflector," Optical Engineering 52(6), 063402 (4 June 2013). https://doi.org/10.1117/1.OE.52.6.063402

Published: 4 June 2013

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