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16 October 2015 InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants
Hala H. Alhashim, Mohammed Zahed Mustafa Khan, Mohammed A. Majid, Tien K. Ng, Boon S. Ooi
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Optical Engineering, Vol. 54, Issue 10, 107107 (October 2015). https://doi.org/10.1117/1.OE.54.10.107107
Abstract
We report on the impurity-free vacancy-disordering effect in InAs/GaAs quantum-dot (QD) laser structure based on seven dielectric capping layers. Compared to the typical SiO2 and Si3N4 films, HfO2 and SrTiO3 dielectric layers showed superior enhancement and suppression of intermixing up to 725°C, respectively. A QD peak ground-state differential blue shift of >175  nm (>148  meV) is obtained for HfO2 capped sample. Likewise, investigation of TiO2, Al2O3, and ZnO capping films showed unusual characteristics, such as intermixing-control caps at low annealing temperature (650°C) and interdiffusion-promoting caps at high temperatures (≥675°C). We qualitatively compared the degree of intermixing induced by these films by extracting the rate of intermixing and the temperature for ground-state and excited-state convergences. Based on our systematic characterization, we established reference intermixing processes based on seven different dielectric encapsulation materials. The tailored wavelength emission of ∼1060─1200  nm at room temperature and improved optical quality exhibited from intermixed QDs would serve as key materials for eventual realization of low-cost, compact, and agile lasers. Applications include solid-state laser pumping, optical communications, gas sensing, biomedical imaging, green–yellow–orange coherent light generation, as well as addressing photonic integration via area-selective, and postgrowth bandgap engineering.
CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
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Hala H. Alhashim, Mohammed Zahed Mustafa Khan, Mohammed A. Majid, Tien K. Ng, and Boon S. Ooi "InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants," Optical Engineering 54(10), 107107 (16 October 2015). https://doi.org/10.1117/1.OE.54.10.107107
Published: 16 October 2015
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Cited by 3 scholarly publications.
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KEYWORDS
Annealing
Hybrid fiber optics
Dielectrics
Silicon
Aluminum
Gallium
Zinc oxide
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