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Prof. Benjamin Iñiguez
at Universitat Rovira i Virgili
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Author
Publications (2)
Proceedings Article | 31 January 2022 Paper
Accounting for the body effect in the compact modeling of an “extrinsic” MOSFET drain current in the linear and saturation regimes
Proceedings Volume 12157, 121570V (2022) https://doi.org/10.1117/12.2624419
KEYWORDS: Field effect transistors, Resistance, Transistors, Amplifiers, Resistors, Doping, Semiconductors
Proceedings Article | 15 March 2019 Paper
A linear “extrinsic” compact model for short-channel MOSFET drain current asymptotic dependence on drain bias in saturation regime
Proceedings Volume 11022, 110220H (2019) https://doi.org/10.1117/12.2521880
KEYWORDS: Field effect transistors, Resistance, Numerical analysis, Semiconductors, Transistors
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