Richard D. Crisp
Vice President Advanced Technology at Etron Technology America Inc
SPIE Involvement:
Author | Instructor
Area of Expertise:
IC Design , Memory and Processor Architecture , Image Sensor Design & Characterization , Imaging System Design , Intellectual Property Protection & Licensing , Scientific Imaging
Profile Summary

Richard D. Crisp is currently vice president of new technology development and chief scientist for Etron America where he is engaged in developing multiaperture imaging systems and advanced DRAM architectures. Mr Crisp has designed Imaging Systems, CPUS, Memories, and miniaturized semiconductor packaging for over 40 years. He has worked for Intel, Motorola, MIPS, Rambus and Tessera where he has received over 99 patents for his work. He was a member of the ISSCC Program Committee from 1991 – 2000 serving as the Program Committee Chair in 2000, Vice Chair in 1999 and Subcommittee Chair 1997-98. He has published many peer-viewed papers in journals and conferences such as the ISSCC, IEEE JSSC, SPIE Electronic Imaging, ISMP, ICEP and IS&T including recent work published in the area of using Photon Transfer methods to quantify thermally dependent image lag in cooled scientific imaging systems. Mr. Crisp is also an avid astrophotographer with many published images including with the OSA, Smithsonian and Space Telescope Science Institute.
Course Instructor
SC504: Introduction to CCD and CMOS Imaging Sensors and Applications
<p> This course provides an introductory to intermediate level overview of the theory and operation of CCD and CMOS image sensors with system design and application considerations in a half-day course. It has been updated to place more emphasis on CMOS and system design considerations with less emphasis on CCDs. A background in solid state electronics and physics is helpful but not necessary. </p> <p> Topics include: </p> <br/> Basics of image capture/formation: photon capture, charge generation, movement and measurement. </p> <p> Sensor architectures & operation, CCDs: full frame, frame transfer, interline and CMOS: Rolling Shutter, Progressive Scan and Global Snap Shutter. Frontside vs backside illumination. Operational differences between CCD and CMOS sensors. </p> <p> Primary noise sources: signal shot noise, fixed pattern noise, thermal noise sources (dark shot noise, dark fixed pattern noise) and read noise plus CMOS random telegraph noise and image lag. </p> <p> Sensor/Camera performance characterization and noise and management: quantum efficiency, Fe55 Soft xray characterization / sensor diffusion MTF assessment/optimization, photon transfer analysis, SNR optimization. </p> <p> System design considerations: tradeoffs among pixel count, frame rate, pixel bit depth, sensor data bandwidth, electrical interfaces, frame buffering and network interface bandwidth. </p> <p> Cost considerations: sensor size, imaging optics, shuttering, cooling. </p> <p> Sensor manufacturing: die size vs lithography type vs wafer size. Substrate electrical properties, Backside illumination fabrication differences. Laminated stacked die architectures. </p> <p> Imaging System Design Examples: Matching a camera to a target: specifying sensor type, pixel size, field of view, lens focal length/focal ratio, frame rate/exposure time, video vs still. Networked video camera high level design example using FPGA plus network interface: key elements, sample design calculations. </p>
SC1323: CMOS Image Sensors: Technology, Applications and Camera Design Methodology
<p> This course provides an introductory to intermediate level overview of the theory and operation of CCD and CMOS image sensors with system design and application considerations in a half-day course. It has been updated to place more emphasis on CMOS and system design considerations with less emphasis on CCDs. A background in solid state electronics and physics is helpful but not necessary. </p> <p> Topics include: Basics of image capture/formation: photon capture, charge generation, movement and measurement </p> <p> Sensor architectures & operation, CCDs: full frame, frame transfer, interline and CMOS: Rolling Shutter, Progressive Scan and Global Snap Shutter. Frontside vs backside illumination. Operational differences between CCD and CMOS sensors. </p> <p> Primary noise sources: signal shot noise, fixed pattern noise, thermal noise sources (dark shot noise, dark fixed pattern noise) and read noise plus CMOS random telegraph noise and image lag </p> <p> Sensor/Camera performance characterization and noise and management: quantum efficiency, Fe55 Soft xray characterization / sensor diffusion MTF assessment/optimization, photon transfer analysis, SNR optimization </p> <p> Sensor manufacturing: die size vs lithography type vs wafer size. Substrate electrical properties, Backside illumination fabrication differences. Laminated stacked die architectures. </p> <p> System design considerations: tradeoffs among pixel architecture, pixel count, frame rate, pixel bit depth, sensor data bandwidth, electrical interfaces, frame buffering and network interface bandwidth. </p> <p> Cost considerations: sensor size, frame rate, imaging optics, shuttering, cooling </p> <p> Imaging System Examples of Top Down Design Approach: Matching a camera to a target: specifying sensor type, pixel size, field of view, lens focal length/focal ratio, frame rate/exposure time, video vs still. Networked video camera high level design example using FPGA plus network interface: key elements, sample design calculations. </p>
SC916: Digital Camera and Sensor Evaluation Using Photon Transfer
Photon transfer (PT) is a popular and essential characterization standard employed in the design, operation, characterization, calibration, optimization, specification and application of digital scientific and commercial camera systems. The PT user friendly technique is based on only two measurements- average signal and rms noise which together produce a multitude of important data products in evaluating digital camera systems (most notably CCD and CMOS). PT is applicable to all imaging disciplines. Design and fabrication process engineers developing imagers rely heavily on PT data products in determining discrete performance parameters such as quantum efficiency (QE), quantum yield, read noise, full well, dynamic range, nonlinearity, fixed pattern noise, V/e- conversion gain, dark current , image, etc.. Camera users routinely use the PT technique to determine system level performance parameters to convert relative measurements into absolute electron and photon units, offset correction, flat field and image S/N, ADC quantizing noise, optimum encoding, minimum detectable luminance, operating temperature to remove dark current , reliability, stability, etc. PT is also the first go/no-go test performed to determine the health of new camera system and/or detector as well as provide a power tool in trouble shooting problems. This course will review these aspects and many others offered by PT.
SIGN IN TO:
  • View contact details

UPDATE YOUR PROFILE
Is this your profile? Update it now.
Don’t have a profile and want one?

Advertisement
Advertisement
Back to Top