III-N UV LEDs are currently of major interest for applications such as sterilisation (UVC) and phototherapy (UVB). Most work to date has focussed on the AlGaN system which is relatively well understood, but this limits the possibility for bandgap engineering in the active region structure. In this presentation we will outline the demonstration of a UV Light emitting diode operating around 340 nm using boron containing (BAlGaN) quantum wells. The device exhibited a higher output intensity compare to the boron free reference sample prepared at the same time. The potential for using such alloys for UVB and UVC devices will be discussed.
As we reduce the emission wavelength of III-Nitride materials, and delve deeper into the UV region, the struggle to keep the material at a high internal quantum efficiency escalates. A reduction in the quantum confined Stark effect and an improvement in strain engineering are just two of the challenges that wurtzite boron nitride (wz-BN) could play a key role in. In this presentation, we investigate the possibility of incorporating wz-BN into ternary and quaternary multiple quantum wells serving as the active region for UV emitters. This work was funded by Science Foundation Ireland (IPIC and PIADs.)
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