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16 March 2024 Metalorganic chemical vapour deposition of β-Ga2O3 films in a close-coupled showerhead reactor
Michael Heuken
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Proceedings Volume PC12887, Oxide-based Materials and Devices XV; PC1288709 (2024) https://doi.org/10.1117/12.3014109
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Recent increasing interest in the research of gallium oxide is being driven by its potential applications for the next generation of power electronic devices. Its material properties including a wide bandgap, high breakdown electric field and large Baliga figure of merit value make it particularly attractive for these applications. Metalorganic Chemical Vapour Deposition (MOCVD) is the leading method for production of compound semiconductor electronic and optoelectronic devices, and for gallium oxide materials, MOCVD may also be advantageous compared to some other epitaxial growth techniques by allowing the controlled growth of alloys of (AlxGa1-x)2O3 and heterostructures. AIXTRON is applying its well-established Close-Coupled Showerhead (CCS) reactor technology to the MOCVD growth of gallium oxide materials and initial results will be presented here. Further results of MOCVD growth of gallium oxide on both sapphire and native Ga2O3 substrates will be discussed.
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Michael Heuken "Metalorganic chemical vapour deposition of β-Ga2O3 films in a close-coupled showerhead reactor", Proc. SPIE PC12887, Oxide-based Materials and Devices XV, PC1288709 (16 March 2024); https://doi.org/10.1117/12.3014109
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KEYWORDS
Metalorganic chemical vapor deposition
Gallium oxide
Electronic components
Film thickness
Sapphire
Optoelectronic devices
Reflection
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