Illumination pupil optimization in 0.33NA EUVL by intensity balancing for semi-iso dark field two-bar M1 building blocks

T. Last; L. de Winter; P. van Adrichem; J. Finders

doi:10.1117/12.2248743

20 October 2016 Illumination pupil optimization in 0.33NA EUVL by intensity balancing for semi-iso dark field two-bar M1 building blocks

T. Last, L. de Winter, P. van Adrichem, J. Finders

Author Affiliations +

Proceedings Volume 10032, 32nd European Mask and Lithography Conference; 100320A (2016) https://doi.org/10.1117/12.2248743
Event: 32nd European Mask and Lithography Conference, 2016, Dresden, Germany

Abstract

We will shed light on the optimization of lithographic metrics for the semi-isolated dark field two-bar logic building block. Under standard D90Y illumination this building block suffers from large mask 3D induced relative focus dependent CD asymmetries. Such behavior limits its overlapping process window and gives rise to untenable full wafer CDU and intra-field pattern shifts.

We have found that besides a Ta absorber thickness reduction an illumination pupil optimization is necessary to fully remove these CD asymmetries. The pupil optimization is achieved by relating the aerial image decomposition (here: symmetrization and balancing of intensities across the diffracted orders) with lithographic metrics per pupil plane location. The resulting pupil allows us (i) to lift the focus-dependent CD asymmetries and (ii) to co-optimize a number of lithographic metrics such as overlapping process window, contrast, non-telecentricity and pattern shift. The importance of subsidiary conditions (e.g. symmetry of the pupil, required DOF) will be discussed.

Citation Download Citation

T. Last, L. de Winter, P. van Adrichem, and J. Finders "Illumination pupil optimization in 0.33NA EUVL by intensity balancing for semi-iso dark field two-bar M1 building blocks", Proc. SPIE 10032, 32nd European Mask and Lithography Conference, 100320A (20 October 2016); https://doi.org/10.1117/12.2248743

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