Dr. Laurens de Winter Profile

Dr. Laurens de Winter

at ASML Netherlands BV

SPIE Involvement:

Author

Publications (19)

Proceedings Article | 22 November 2023 Poster

Curvilinear mask embodiment for high NA: an imaging perspective

Parul Dhagat, Sofia Leitao, Sander Blok, Laurens de Winter, Eelco van Setten

Proceedings Volume PC12750, PC1275013 (2023) https://doi.org/10.1117/12.2691085

KEYWORDS: Diffraction, Cadmium, Manufacturing, Image acquisition, Optical proximity correction, Nanoimprint lithography, Critical dimension metrology, Imaging arrays, Bias correction

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SPIE Journal Paper | 21 April 2022

Extreme ultraviolet scanner with high numerical aperture: obscuration and wavefront description

Laurens de Winter, Timur Tudorovskiy, Jan van Schoot, Kars Troost, Erwin Stinstra, Stephen Hsu, Toralf Gruner, Juergen Mueller, Ruediger Mack, Bartosz Bilski, Joerg Zimmermann, Paul Graeupner

JM3, Vol. 21, Issue 02, 023801, (April 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.2.023801

KEYWORDS: Wavefronts, Zernike polynomials, Scanners, Extreme ultraviolet, Spherical lenses, Monochromatic aberrations, Mirrors, Extreme ultraviolet lithography, Lithography, Sensors

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Proceedings Article | 18 November 2020 Presentation + Paper

High NA EUV scanner: obscuration and wavefront description

Laurens de Winter, Timur Tudorovskiy, Jan van Schoot, Kars Troost, Erwin Stinstra, Stephen Hsu, Toralf Gruner, Juergen Mueller, Ruediger Mack, Bartosz Bilski, Joerg Zimmermann, Paul Graeupner

Proceedings Volume 11517, 1151715 (2020) https://doi.org/10.1117/12.2572878

KEYWORDS: Mirrors, Multilayers, Scanners, Wavefronts, Extreme ultraviolet, Transistors, Extreme ultraviolet lithography

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Proceedings Article | 30 October 2020 Presentation + Paper

Stitching enablement for anamorphic imaging: a ~1μm exclusion band and its implications

Vincent Wiaux, Joost Bekaert, Tatiana Kovalevich, Julien Ryckaert, Eric Hendrickx, Natalia Davydova, Pieter Woltgens, Ming-Chun Tien, Laurens de Winter, Mark Maslow, Kars Troost

Proceedings Volume 11517, 1151713 (2020) https://doi.org/10.1117/12.2573155

KEYWORDS: Reticles, Imaging systems, Image resolution, Photomasks, Extreme ultraviolet, Optical proximity correction, Semiconducting wafers

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Proceedings Article | 23 March 2020 Paper

Spectral purity performance of high-power EUV systems

Mark van de Kerkhof, Fei Liu, Marieke Meeuwissen, Xueqing Zhang, Robert de Kruif, Natalia Davydova, Guido Schiffelers, Felix Wählisch, Eelco van Setten, Wouter Varenkamp, Kees Ricken, Laurens de Winter, John McNamara, Muharrem Bayraktar

Proceedings Volume 11323, 1132321 (2020) https://doi.org/10.1117/12.2551021

KEYWORDS: Reticles, Deep ultraviolet, Imaging systems, Scanners, Reflectivity, Extreme ultraviolet, Extreme ultraviolet lithography

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Proceedings Article | 30 October 2017 Presentation + Paper

Edge placement error control and Mask3D effects in High-NA anamorphic EUV lithography

Eelco van Setten, Gerardo Bottiglieri, Laurens de Winter, John McNamara, Paul Rusu, Jan Lubkoll, Gijsbert Rispens, Jan van Schoot, Jens Timo Neumann, Matthias Roesch, Bernhard Kneer

Proceedings Volume 10450, 104500W (2017) https://doi.org/10.1117/12.2280624

KEYWORDS: Mirrors, Reticles, Imaging systems, Scanners, Reflectivity, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Nanoimprint lithography, Semiconducting wafers

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To enable cost-effective shrink at the 3nm node and beyond, and to extend Moore’s law into the next decade, ASML is developing a new high-NA EUV platform. The high-NA system is targeted to feature a numerical aperture (NA) of 0.55 to extend the single exposure resolution limit to 8nm half pitch. The system is being designed to achieve an on-product-overlay (OPO) performance well below 2nm, a high image contrast to drive down local CD errors and to obtain global CDU at sub-1nm level to be able to meet customer edge placement error (EPE) requirements for the devices of the future. EUV scanners employ reflective Bragg multi-layer mirrors in the mask and in the Projection Optics Box (POB) that is used to project the mask pattern into the photoresist on the silicon wafer. These MoSi multi-layer mirrors are tuned for maximum reflectivity, and thus productivity, at 13.5nm wavelength. The angular range of incident light for which a high reflectivity at the reticle can be obtained is limited to ~ +/- 11o, exceeding the maximum angle occurring in current 0.33NA scanners at 4x demagnification. At 0.55NA the maximum angle at reticle level would extend up to 17o in the critical (scanning) direction and compromise the imaging performance of horizontal features severely. To circumvent this issue a novel anamorphic optics design has been introduced, which has a 4x demagnification in the X- (slit) direction and 8x demagnification in the Y- (scanning) direction as well as a central obscuration in the exit pupil. In this work we will show that the EUV high-NA anamorphic concept can successfully solve the angular reflectivity issues and provide good imaging performance in both directions. Several unique imaging challenges in comparison to the 0.33NA isomorphic baseline are being studied, such as the impact of the central obscuration in the POB and Mask-3D effects at increased NA that seem most pronounced for vertical features. These include M3D induced contrast loss and non-telecentricity. We will explore the solutions needed to mitigate these effects and to offer high quality imaging to be able to meet the required EPE performance in both orientations.

Proceedings Article | 24 March 2017 Presentation + Paper

N7 dark field two-bar in 0.33NA EUVL: Mitigation of CD Bossung tilts caused by strong coupling between the feature's primary and 1st self-image

T. Last, P. van Adrichem, L. de Winter, S. Hsu, J. Finders, F. Wittebrood, M. van de Kerkhof

Proceedings Volume 10143, 1014311 (2017) https://doi.org/10.1117/12.2257463

KEYWORDS: Diffraction, Logic, Lithographic illumination, Image acquisition, Photomasks, Image enhancement, Extreme ultraviolet lithography, Source mask optimization, SRAF, Critical dimension metrology, 3D image processing

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SPIE Journal Paper | 30 November 2016

Illumination pupil optimization in 0.33-NA extreme ultraviolet lithography by intensity balancing for semi-isolated dark field two-bar M1 building blocks

Thorsten Last, Laurens de Winter, Paul van Adrichem, Jo Finders

JM3, Vol. 15, Issue 04, 043508, (November 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.4.043508

KEYWORDS: Critical dimension metrology, Lithographic illumination, Extreme ultraviolet lithography, Lithography, Tantalum, Photomasks, Diffraction, Extreme ultraviolet, Line width roughness, Image acquisition

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Proceedings Article | 20 October 2016 Paper

Illumination pupil optimization in 0.33NA EUVL by intensity balancing for semi-iso dark field two-bar M1 building blocks

T. Last, L. de Winter, P. van Adrichem, J. Finders

Proceedings Volume 10032, 100320A (2016) https://doi.org/10.1117/12.2248743

KEYWORDS: Lithography, Diffraction, Lithographic illumination, Image acquisition, Photomasks, Extreme ultraviolet, Line width roughness, Extreme ultraviolet lithography, Nanoimprint lithography, Tantalum

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Proceedings Article | 19 October 2016 Paper

Experimental verification of AI decomposition-based source optimization for M1 two-bar building blocks in 0.33NA EUVL

T. Last, Z. Wang, P. van Adrichem, L. de Winter, J. Finders

Proceedings Volume 9985, 99850W (2016) https://doi.org/10.1117/12.2240862

KEYWORDS: Diffraction, Photomasks, Extreme ultraviolet, Artificial intelligence, Extreme ultraviolet lithography, Source mask optimization, SRAF, Critical dimension metrology, Photomicroscopy, 3D image processing

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SPIE Journal Paper | 6 May 2016

Mitigation of mask three-dimensional induced phase effects by absorber optimization in ArF_i and extreme ultraviolet lithography

Jo Finders, Laurens de Winter, Thorsten Last

JM3, Vol. 15, Issue 02, 021408, (May 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021408

KEYWORDS: Photomasks, Diffraction, Extreme ultraviolet lithography, 3D modeling, Extreme ultraviolet, Lithography, Diffraction gratings, Tantalum, Refractive index, 3D image processing

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Proceedings Article | 23 October 2015 Paper

Imaging enhancement by reduction of mask topography induced phase aberrations for horizontal 1D spaces under D90Y illumination

T. Last, L. de Winter, J. Finders

Proceedings Volume 9635, 96350K (2015) https://doi.org/10.1117/12.2196800

KEYWORDS: Optical components, Lithography, Reticles, Surface plasmons, Nickel, Photomasks, Extreme ultraviolet, Nanoimprint lithography, Tantalum, Absorption

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Proceedings Article | 4 September 2015 Paper

Understanding of Out-of-Band DUV light in EUV lithography: controlling impact on imaging and mitigation strategies

N. Davydova, R. Kottumakulal, J. Hageman, J. McNamara, R. Hoefnagels, V. Vaenkatesan, A. van Dijk, K. Ricken, L. de Winter, R. de Kruif, R. Jonckheere, T. Hollink, G. Schiffelers, E. van Setten, P. Colsters, W. Liebregts, R. Pellens, J. van Dijk

Proceedings Volume 9661, 96610B (2015) https://doi.org/10.1117/12.2195733

KEYWORDS: Reticles, Deep ultraviolet, Reflection, Scanners, Coating, Reflectivity, Extreme ultraviolet, Aluminum, Extreme ultraviolet lithography, Semiconducting wafers

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EUV sources emit a broad band DUV Out-of-Band (OOB) light, in particular, in the wavelength range 100-400 nm. This can cause additional exposure of EUV resists made that are based on a ArF/KrF resist platform. This DUV light is partially suppressed while travelling through the optical path but a non-negligible part of it reaches wafer level and impacts imaging.

This is important for imaging at the edges of an image field when fields are printed very close to each other on the wafer (so-called butted fields, with zero field to field spacing). DUV light is reflected from the reticle black border (BB) into a neighboring exposure field on the wafer. This results in a CD change at the edges and in the corners of the fields and therefore has an impact on CD uniformity. Experimental CDU results are shown for 16 nm dense lines (DL) and 20 nm isolated spaces (IS) (N7 logic design features) in the fields exposed at 0 mm and 0.5mm distance on the wafer. Areas close to the edge of the image field are important for customer applications as they often contain qualification and monitoring structures; in addition, limited imaging capabilities in this area may result in loss of usable wafer space.

In order to understand and control OOB DUV light, it must be measured in the scanner. DUV measurements are performed in resist using a special OOB reticle coated with Aluminum (Al) having low EUV reflectance and high DUV reflectance. A model for DUV light impact on the imaging is proposed and verified. For this, DUV reflectance data is collected in the wavelengths range 100-400 nm for Al and BB and the ratio of reflectances of these materials is determined for assumed scanner and resist OOB spectra. Also direct BB OOB test is performed on the wafer and compared to Al OOB results. The sensitivity of 16 nm DL and 20 nm IS to OOB light is experimentally determined by means of double exposure test: a wafer with exposed imaging structures undergoes a second flood exposure from a DUV reflective material (Al or BB).

Finally, several OOB mitigation strategies are discussed, in particular, suppression of DUV light in the scanner (~3x improvement), recent successes of DUV suppression for 16 nm imaging resist (~1.8x improvement) and DUV reflectance mitigation in the reticle black border (~3.8x). An overview of OOB test results for multiple NXE systems will be shown including systems with new NXE:3350 optics with improved OOB suppression.

Proceedings Article | 4 September 2015 Paper

Understanding the litho-impact of phase due to 3D mask effects when using off-axis illumination

L. de Winter, T. Last, N. Davydova, J. Finders

Proceedings Volume 9661, 96610A (2015) https://doi.org/10.1117/12.2195469

KEYWORDS: Diffraction, Apodization, Refractive index, Distortion, 3D modeling, Photomasks, Extreme ultraviolet, Nanoimprint lithography, Tantalum, Absorption

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Proceedings Article | 9 July 2015 Paper

Grid-supported EUV pellicles: A theoretical investigation for added value

Florian Dhalluin, Laurens de Winter, Luigi Scaccabarozzi, Jack Van der Sanden, Sven Lentzen, Rob Van Gils, Maurice Bogers, Erik Ruinemans, Derk Brouns, Juan Diego Arias Espinoza, Mária Péter, Daniel Smith, Wim Van der Zande, Hans Vermeulen

Proceedings Volume 9658, 96580J (2015) https://doi.org/10.1117/12.2197454

KEYWORDS: Reticles, Scanners, Particles, Resistance, Pellicles, Finite element methods, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Protactinium

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Proceedings Article | 17 April 2014 Paper

Progress on EUV pellicle development

Carmen Zoldesi, Kursat Bal, Brian Blum, Guus Bock, Derk Brouns, Florian Dhalluin, Nina Dziomkina, Juan Diego Arias Espinoza, Joost de Hoogh, Silvester Houweling, Maarten Jansen, Mohammad Kamali, Alain Kempa, Ronald Kox, Robert de Kruif, Jorge Lima, Yang Liu, Henk Meijer, Hans Meiling, Ijen van Mil, Marco Reijnen, Luigi Scaccabarozzi, Daniel Smith, Beatrijs Verbrugge, Laurens de Winters, Xugang Xiong, John Zimmerman

Proceedings Volume 9048, 90481N (2014) https://doi.org/10.1117/12.2049276

KEYWORDS: Reticles, Particles, Silicon, Manufacturing, Pellicles, Extreme ultraviolet, Critical dimension metrology, Semiconducting wafers, Prototyping, Protactinium

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Proceedings Article | 27 March 2007 Paper

Modeling polarization for hyper-NA lithography tools and masks

Kafai Lai, Alan Rosenbluth, Geng Han, Jaione Tirapu-Azpiroz, Jason Meiring, Aksel Goehnermeier, Bernhard Kneer, Michael Totzeck, Laurens de Winter, Wim de Boeij, Mark van de Kerkhof

Proceedings Volume 6520, 65200D (2007) https://doi.org/10.1117/12.712272

KEYWORDS: Thin films, Lithography, Diffraction, Optical lithography, Polarization, Birefringence, Pellicles, Photomasks, Optical proximity correction, Critical dimension metrology

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Proceedings Article | 26 March 2007 Paper

Sensitivity of hyper-NA immersion lithography to illuminator imperfections

Weimin Gao, Laurens De Winter

Proceedings Volume 6520, 652039 (2007) https://doi.org/10.1117/12.711188

KEYWORDS: Lithography, Lithographic illumination, Scanners, Computer simulations, Solids, Immersion lithography, Optical proximity correction, Critical dimension metrology, Device simulation, Fiber optic illuminators

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Proceedings Article | 15 March 2006 Paper

Enabling the 45nm node by hyper-NA polarized lithography

Wim de Boeij, Geert Swinkels, Nicolas Le Masson, Armand Koolen, Henk van Greevenbroek, Michel Klaassen, Mark van de Kerkhof, Koen van Ingen Schenau, Laurens de Winter, Martijn Wehrens, Steve Hansen, Christian Wagner

Proceedings Volume 6154, 61540B (2006) https://doi.org/10.1117/12.659006

KEYWORDS: Lithography, Reticles, Lithographic illumination, Polarization, Birefringence, Imaging systems, Scanners, Electroluminescence, Photomasks, Fiber optic illuminators

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Showing 5 of 19 publications

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