High operating temperature long-wave HgCdTe detector for fast response operation: optimization approach

P. Martyniuk; M. Kopytko; K. Grodecki; W. Gawron; E. Gomułka

doi:10.1117/12.2242288

2 September 2016 High operating temperature long-wave HgCdTe detector for fast response operation: optimization approach

P. Martyniuk, M. Kopytko, K. Grodecki, W. Gawron, E. Gomułka

Author Affiliations +

Proceedings Volume 10034, 11th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods; 1003404 (2016) https://doi.org/10.1117/12.2242288
Event: 11th Integrated Optics - Sensors, Sensing Structures and Methods, 2016, Szczyrk, Poland

Abstract

It is fully confirmed that the development of the new HgCdTe long-wave (8−12 μm) infrared radiation (LWIR) detector has been driven by applications requiring high frequency response ( τ _s) and operation at higher temperature (HOT - hot operating temperature, T > 200 K) [1]. Not only time response but also detectivity directly linked with τ _s of the HOT HgCdTe detector should be optimized. The HOT HgCdTe’s performance is limited by Auger processes and to circumvent that issue the N+/π/P+n+ device’s designs has been proposed to suppress generation - recombination (GR) processes, i.e. combination of exclusion and extraction heterojunctions (π is a p-type doping region) [2−5]. The nominally sharp interfaces in N⁺/π/P⁺n⁺ (especially N⁺π) layered HgCdTe heterostructures are affected by interdiffusion during technological process leading to significant composition and doping grading occurring during HgCdTe growth by MOCVD [6,7]. Mentioned composition and doping grading should be controlled to optimize frequency performance of the devices. In this paper we present short analysis of the time response depending on type and doping grading of N⁺/π/P⁺n⁺ HOT LWIR HgCdTe structure. Time response of the long-wave HgCdTe detector with 50% cut-off wavelength ( λ _c), ≈ 10.6 μm at T = 230 K, V = 200 mV was reduced form ~ 160 ps to ~ 52 ps by optimization of the N⁺π interface even for low voltage operation ~ 200 mV.

Citation Download Citation

P. Martyniuk, M. Kopytko, K. Grodecki, W. Gawron, and E. Gomułka "High operating temperature long-wave HgCdTe detector for fast response operation: optimization approach", Proc. SPIE 10034, 11th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 1003404 (2 September 2016); https://doi.org/10.1117/12.2242288

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