VLWIR high operating temperature non-equilibrium photovoltaic HgCdTe devices

S. Velicu; C. H. Grein; A. Itsuno; J. D. Phillips

doi:10.1117/12.873470

24 January 2011 VLWIR high operating temperature non-equilibrium photovoltaic HgCdTe devices

S. Velicu, C. H. Grein, A. Itsuno, J. D. Phillips

Proceedings Volume 7945, Quantum Sensing and Nanophotonic Devices VIII; 79451L (2011) https://doi.org/10.1117/12.873470
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

A nearly universal goal for infrared photon detection systems is to increase their operating temperature without sacrificing performance. For high quality HgCdTe photovoltaic infrared detectors at elevated temperatures, the lowdoped absorber layer becomes intrinsic, carrier concentrations are high and Auger processes typically dominate the dark current. Device designs have been proposed to suppress Auger processes in the absorber by placing it between exclusion and extraction junctions under reverse bias. In this work, we analyze the non-equilibrium operation of very long wavelength infrared (VLWIR) HgCdTe devices and identify the performance improvements (operation temperature, responsivity, detectivity) expected when Auger suppression occurs. We identify critical structure design requirements that must be satisfied for optimal performance characteristics from VLWIR non-equilibrium devices and compare these devices with current state of the art double layer planar heterostructure (DLPH) devices.

Citation Download Citation

S. Velicu, C. H. Grein, A. Itsuno, and J. D. Phillips "VLWIR high operating temperature non-equilibrium photovoltaic HgCdTe devices", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451L (24 January 2011); https://doi.org/10.1117/12.873470

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