Presentation
28 April 2017 Properties of novel metamorphic III-V materials with ultra-low bandgaps (Conference Presentation)
Sergey Suchalkin, Gregory Belenky, Leon Shterengas, Boris Laykhtman, Gela Kipshidze, Maxim Ermolaev, Dmitry Smirnov, Jonathan Ludwig, Seongphill Moon, David Graf, Stefan P. Svensson, Wendy L. Sarney
Author Affiliations +
Abstract
We present magnetooptical and transport properties of metamorphic periodic structures containing InAsSb layers with controllable modulated Sb composition [1]. The modulation period is determined by the thicknesses of the strain compensated InAsSbx/InAsSby pairs grown on a virtual AlGaInSb substrate with a lattice constant of 6.25 A. We demonstrate that the bandgap energy of ordered InAsSb0.3/InAsSb0.75 alloy varies from 100mev to a few meV as a result of the well-regulated variation of the modulation period from ∼3 to ∼7.5 nm. The material effective masses and the specific character of the energy spectra will be discussed. 1. G. Belenky, Y. Lin, L. Shterengas, D. Donetsky, G. Kipshidze and S. Suchalkin, Electron. Lett. 51 (19), 1521, (2015)
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey Suchalkin, Gregory Belenky, Leon Shterengas, Boris Laykhtman, Gela Kipshidze, Maxim Ermolaev, Dmitry Smirnov, Jonathan Ludwig, Seongphill Moon, David Graf, Stefan P. Svensson, and Wendy L. Sarney "Properties of novel metamorphic III-V materials with ultra-low bandgaps (Conference Presentation)", Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 101112U (28 April 2017); https://doi.org/10.1117/12.2251362
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KEYWORDS
Modulation

Antimony

Current controlled current source

Nanoelectronics

Photonics

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