Prof. Gregory Belenky Profile

Prof. Gregory Belenky

Distinguished Professor at Stony Brook Univ

SPIE Involvement:

Author

Publications (35)

Proceedings Article | 13 March 2024 Presentation + Paper

CW room temperature operation of the GaSb-based photonic crystal surface emitting diode lasers

L. Shterengas, W. Lee, R. Liu, A. Stein, G. Kipshidze, G. Belenky

Proceedings Volume 12905, 1290506 (2024) https://doi.org/10.1117/12.3001052

KEYWORDS: Photonic crystals, Design, Continuous wave operation, Heterojunctions, Semiconductor lasers, Polarization, Gallium antimonide, Diodes

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Proceedings Article | 4 March 2022 Presentation + Paper

Electrically pumped epitaxially regrown [lambda] > 2 µm GaSb-based photonic crystal surface-emitting lasers

Leon Shterengas, R. Liu, G. Kipshidze, A. Stein, Wonjae Lee, Dmitri Zakharov, Kim Kisslinger, Gregory Belenky

Proceedings Volume 12021, 120210B (2022) https://doi.org/10.1117/12.2615741

KEYWORDS: Photonic crystals, Semiconductor lasers, Quantum wells, Etching, Electroluminescence, Gallium antimonide, Transmission electron microscopy

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Proceedings Article | 9 March 2020 Presentation

The GaSb-based Y-branch DBR and photonic crystal lasers (Conference Presentation)

Leon Shterengas, Jiang Jiang, Takashi Hosoda, Aaron Stein, Alexey Belyanin, Ruiyan Liu, Wonjae Lee, Gela Kipshidze, Gregory Belenky

Proceedings Volume 11301, 113011M (2020) https://doi.org/10.1117/12.2548623

KEYWORDS: Photonic crystals, Laser crystals, Mid-IR, Laser applications, Difference frequency generation, Reflectors, Quantum wells

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Proceedings Article | 13 March 2019 Presentation

Advances in development of the GaSb-based type-I quantum-well cascade-diode lasers: wavelength tuning and mode-locking (Conference Presentation)

Leon Shterengas, Takashi Hosoda, Tao Feng, Jiang Jiang, Alexey Belyanin, Gela Kipshidze, Gregory Belenky

Proceedings Volume 10939, 1093918 (2019) https://doi.org/10.1117/12.2513637

KEYWORDS: Semiconductor lasers, Quantum wells, Mode locking, Wavelength tuning, Quantum cascade lasers, Heterojunctions, Laser optics, Light emitting diodes, Quantum efficiency, Pulsed laser operation

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Proceedings Article | 19 February 2018 Paper

Passive mode-locking of 3.25um GaSb-based type-I quantum-well cascade diode lasers

Tao Feng, Leon Shterengas, Gela Kipshidze, Takashi Hosoda, Meng Wang, Gregory Belenky

Proceedings Volume 10553, 1055319 (2018) https://doi.org/10.1117/12.2287463

KEYWORDS: Mode locking, Semiconductor lasers, Quantum wells, Continuous wave operation, Waveguides, Mid-IR, Frequency combs, Ultrafast laser spectroscopy, Spectroscopy, Sensors

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SPIE Journal Paper | 14 September 2017 Open Access

External cavity cascade diode lasers tunable from 3.05 to 3.25 μm

Meng Wang, Takashi Hosoda, Leon Shterengas, Gela Kipshidze, Ming Lu, Aaron Stein, Gregory Belenky

OE, Vol. 57, Issue 01, 011012, (September 2017) https://doi.org/10.1117/12.10.1117/1.OE.57.1.011012

KEYWORDS: Semiconductor lasers, Quantum wells, Laser damage threshold, Quantum cascade lasers, Reflectivity, Waveguide lasers, Heterojunctions, Aluminum, Continuous wave operation, Waveguides

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Proceedings Article | 28 April 2017 Presentation

Properties of novel metamorphic III-V materials with ultra-low bandgaps (Conference Presentation)

Sergey Suchalkin, Gregory Belenky, Leon Shterengas, Boris Laykhtman, Gela Kipshidze, Maxim Ermolaev, Dmitry Smirnov, Jonathan Ludwig, Seongphill Moon, David Graf, Stefan Svensson, Wendy Sarney

Proceedings Volume 10111, 101112U (2017) https://doi.org/10.1117/12.2251362

KEYWORDS: Nanoelectronics, Photonics, Current controlled current source, Modulation, Antimony

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Proceedings Article | 20 February 2017 Presentation + Paper

High-power 1.9-3.3-um type-I quantum-well cascade diode lasers

L. Shterengas, T. Hosoda, M. Wang, T. Feng, G. Kipshidze, G. Belenky

Proceedings Volume 10123, 101230P (2017) https://doi.org/10.1117/12.2251229

KEYWORDS: Semiconductor lasers, High power lasers, Quantum wells, Laser spectroscopy, Continuous wave operation, Quantum cascade lasers, Mid-IR, Waveguide modes, Waveguides, Laser damage threshold, Heterojunctions, Aluminum, Diffraction

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Proceedings Article | 7 March 2016 Paper

Type-I QW cascade diode lasers for spectral region above 3 um

L. Shterengas, T. Hosoda, M. Wang, T. Feng, G. Kipshidze, G. Belenky

Proceedings Volume 9767, 976703 (2016) https://doi.org/10.1117/12.2208933

KEYWORDS: Semiconductor lasers, Quantum wells, Quantum cascade lasers, Heterojunctions, High power lasers, Mid-IR, Semiconductors, Laser damage threshold, Laser development, Methane, Continuous wave operation, Diodes, Etching, Waveguides, Tunable lasers

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Proceedings Article | 7 March 2016 Paper

First demonstration of single-mode distributed feedback type-I GaSb cascade diode laser emitting near 2.9 um

Mathieu Fradet, Takashi Hosoda, Clifford Frez, Leon Shterengas, Stanley Sander, Siamak Forouhar, Gregory Belenky

Proceedings Volume 9767, 97670U (2016) https://doi.org/10.1117/12.2213224

KEYWORDS: Semiconductor lasers, Quantum wells, Gallium antimonide, Sensors, Waveguides, Absorption, Diodes, Heterojunctions, Gallium indium arsenide antimonide phosphide, Copper

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Proceedings Article | 10 March 2015 Paper

Type-I QW cascade diode lasers with 830 mW of CW power at 3 µm

L. Shterengas, R. Liang, T. Hosoda, G. Kipshidze, G. Belenky, S. Bowman, R. Tober

Proceedings Volume 9382, 93820X (2015) https://doi.org/10.1117/12.2076631

KEYWORDS: Quantum wells, Semiconductor lasers, Continuous wave operation, Quantum cascade lasers, Laser damage threshold, Diodes, Heterojunctions, Laser development, Waveguides

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Proceedings Article | 27 February 2014 Paper

Cascade pumping of GaSb-based type-I quantum well diode lasers

L. Shterengas, R. Liang, G. Kipshidze, T. Hosoda, S. Suchalkin, G. Belenky

Proceedings Volume 9002, 900213 (2014) https://doi.org/10.1117/12.2038429

KEYWORDS: Quantum wells, Semiconductor lasers, Quantum cascade lasers, Heterojunctions, Continuous wave operation, Diodes, Waveguides, Laser damage threshold, Light emitting diodes, Absorption

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Proceedings Article | 11 June 2013 Paper

Infrared emitters and photodetectors with InAsSb bulk active regions

Ding Wang , Youxi Lin, Dmitry Donetsky, Gela Kipshidze , Leon Shterengas, Gregory Belenky, Stefan Svensson, Wendy Sarney, Harry Hier

Proceedings Volume 8704, 870410 (2013) https://doi.org/10.1117/12.2016082

KEYWORDS: Heterojunctions, Antimony, Quantum efficiency, Infrared radiation, Electroluminescence, Sensors, Photodetectors, Infrared photography, Long wavelength infrared, Laser sintering

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Proceedings Article | 31 May 2012 Paper

Unrelaxed bulk InAsSb with novel absorption, carrier transport, and recombination properties for MWIR and LWIR photodetectors

Ding Wang, Youxi Lin, Dmitry Donetsky, Leon Shterengas, Gela Kipshidze, Gregory Belenky, Wendy Sarney, Harry Hier, Stefan Svensson

Proceedings Volume 8353, 835312 (2012) https://doi.org/10.1117/12.919451

KEYWORDS: Gallium antimonide, Antimony, Indium arsenide, Absorption, Long wavelength infrared, Laser sintering, Superlattices, Mid-IR, Photodetectors, Luminescence

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Proceedings Article | 9 February 2012 Paper

High performance interband cascade lasers at 3.8 microns

R. Leavitt, J. Bruno, J. Bradshaw, K. Lascola, J. Pham, F. Towner, S. Suchalkin, G. Belenky, I. Vurgaftman, C. Canedy, W. Bewley, C. S. Kim, M. Kim, C. Merritt, J. Meyer

Proceedings Volume 8277, 82771E (2012) https://doi.org/10.1117/12.910586

KEYWORDS: Continuous wave operation, Pulsed laser operation, Semiconductor lasers, Laser damage threshold, Quantum cascade lasers, Laser applications, Antimony, Temperature metrology, Quantum efficiency

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Proceedings Article | 21 May 2011 Paper

Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs[sub]1-X[/sub]Sb[sub]X[/sub] alloys

G. Belenky, G. Kipshidze, D. Donetsky, S. Svensson, W. Sarney, H. Hier, L. Shterengas, D. Wang, Y. Lin

Proceedings Volume 8012, 80120W (2011) https://doi.org/10.1117/12.883625

KEYWORDS: Laser sintering, Gallium antimonide, Antimony, Long wavelength infrared, Mercury cadmium telluride, Mid-IR, Absorption, Modulation, Phonons, Indium arsenide

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Proceedings Article | 17 February 2011 Paper

Type-I GaSb based single lateral mode diode ridge lasers operating at room temperature in 3.1-3.2 μm spectral region

G. Tsvid, T. Hosoda, J. Chen, G. Kipshidze, L. Shterengas, C. Frez, A. Soibel, S. Forouhar, G. Belenky

Proceedings Volume 7953, 79531Q (2011) https://doi.org/10.1117/12.875307

KEYWORDS: Dielectrics, Waveguides, Continuous wave operation, Metals, Semiconductor lasers, Gallium antimonide, Near field optics, Laser processing, Diodes

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Proceedings Article | 24 January 2011 Paper

Low power consumption lasers for next generation miniature optical spectrometers for trace gas analysis

S. Forouhar, C. Frez, K. J. Franz, A. Ksendzov, Y. Qiu, K. A. Soibel, J. Chen, T. Hosoda, G. Kipshidze, L. Shterengas, G. Belenky

Proceedings Volume 7945, 79450M (2011) https://doi.org/10.1117/12.871565

KEYWORDS: Semiconductor lasers, Quantum cascade lasers, Space operations, Spectrometers, Absorption, Laser development, Quantum efficiency, Reliability, Chemical analysis, Continuous wave operation

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Proceedings Article | 4 May 2010 Paper

Type-I GaSb based diode lasers operating at room temperature in 2 to 3.5 µm spectral region

J. Chen, T. Hosoda, G. Tsvid, R. Liang, D. Westerfeld, G. Kipshidze, L. Shterengas, G. Belenky

Proceedings Volume 7686, 76860S (2010) https://doi.org/10.1117/12.852208

KEYWORDS: Waveguides, Semiconductor lasers, Continuous wave operation, Gallium antimonide, Indium, Quantum wells, Cladding, Aluminum, Optical fibers

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Proceedings Article | 4 May 2010 Paper

Carrier lifetime measurements in InAs/GaSb strained layer superlattice structures

Stefan Svensson, Dmitry Donetsky, Ding Wang, Patrick Maloney, Gregory Belenky

Proceedings Volume 7660, 76601V (2010) https://doi.org/10.1117/12.849514

KEYWORDS: Laser sintering, Interfaces, Absorption, Gallium antimonide, Superlattices, Modulation, Indium arsenide, Camera shutters, Luminescence, Mercury cadmium telluride

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Proceedings Article | 16 April 2008 Paper

Development of a mid-infrared interband cascade LED array

John Bradshaw, John Bruno, Frederick Towner, Christi Shiner, John Pham, Sergey Suchalkin, Gregory Belenky

Proceedings Volume 6942, 69420G (2008) https://doi.org/10.1117/12.780325

KEYWORDS: Light emitting diodes, Mid-IR, Black bodies, Cladding, Resistors, Sensors, Modulation, Infrared radiation, Microscopes, Chemical elements

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Proceedings Article | 12 February 2008 Paper

Interband GaSb-based laser diodes for spectral regions of 2.3-2.4 µm and 3-3.1 µm with improved room-temperature performance

Gregory Belenky, Dimitri Donetski, Leon Shterengas, Takashi Hosoda, Jianfeng Chen, Gela Kipshidze, Michail Kisin, David Westerfeld

Proceedings Volume 6900, 690004 (2008) https://doi.org/10.1117/12.754713

KEYWORDS: Waveguides, Semiconductor lasers, Quantum wells, Heterojunctions, Laser development, Aluminum, Indium gallium arsenide antimonide, Continuous wave operation, Gallium antimonide

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Proceedings Article | 13 September 2005 Paper

1.5 and 2.3 µm diode laser arrays for optical pumping

A. Gourevitch, G. Belenky, L. Shterengas, D. Donetsky, D. Westerfeld, B. Laikhtman, R. Martinelli, G. Kim

Proceedings Volume 5887, 588711 (2005) https://doi.org/10.1117/12.620001

KEYWORDS: Temperature metrology, Semiconductor lasers, Laser development, Pulsed laser operation, High power lasers, Continuous wave operation, Resistance, Erbium, Erbium lasers, Optical pumping

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High wall-plug efficiency and a wide range of available wavelengths make laser diode arrays preferable for many high-power applications, including optical pumping of solid state lasers. Recently, we designed and fabricated InGaAsP/InP arrays operating at 1.5-μm and In(Al)GaAsSb/GaSb arrays operating at 2.3-μm. We have demonstrated a high continuous-wave (CW) output power of 25 W from a one dimensional laser array and a quasi-CW (q-CW) output power of 110 W from a two dimensional laser array both operating near 1.5-μm. We have obtained a CW output power of 10 W from the 2.3-μm laser array. The 1.5-μm arrays are suitable for resonant pumping of erbium doped solid-state lasers, which require high power optical sources emitting in the narrow erbium absorption bands. Long current-injection pulses produce a considerable temperature increase within the diode laser structure which induces a red-shift of the output wavelength. This thermal drift of the laser array emission spectrum can lead to misalignment with the erbium absorption bands, which decreases pumping efficiency. We have developed an experimental technique to measure the time dependence of the laser emission spectrum during a single current pulse. From the red-shift of the laser emission, we determine the temperature of the laser active region as a function of time. The spacing between the individual laser emitters has an effect on the array heating. In steady state operation, this spacing is a contributing factor in the non-uniformity of the thermal field within the bar, and thus to the overall thermal resistance of the laser bar. Under pulse operation, the transient heating process can be divided into three time periods; each with its own heat transport condition. It was shown that in the initial period of time the heat propagates within the laser bar structure and the laser bar design (fill factor) strongly affects the active region temperature rise. In the later periods the temperature kinetics is insensitive to the fill factor. This analysis has been verified in experimental studies using the 1.5-μm laser arrays.

Proceedings Article | 1 April 2005 Paper

Electrically tunable cascaded mid-IR type II light source

Sergey Suchalkin, Mikhail Kisin, Gregory Belenky, Serge Luryi, Yuri Vasilyev, John Bruno, Fred Towner, Richard Tober

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.589638

KEYWORDS: Electroluminescence, Heterojunctions, Wavelength tuning, Gallium, Antimony, Light sources, Semiconductor lasers, Quantum wells, Mid-IR, Laser damage threshold

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Proceedings Article | 25 March 2005 Paper

GaSb-based lasers for spectra region 2-4 µm: challenges and limitations

Gregory Belenky, Leon Shterengas, J.G. Kim, Ramon Martinelli, Sergey Suchalkin, Mikhail Kisin

Proceedings Volume 5732, (2005) https://doi.org/10.1117/12.584729

KEYWORDS: Quantum wells, Semiconductor lasers, Mid-IR, Continuous wave operation, Indium gallium arsenide antimonide, Waveguides, High power lasers, Aluminum, Gallium

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Proceedings Article | 11 May 2004 Paper

High-power room-temperature continuous wave operation of type-I In(Al)GaAsSb/GaSb diode lasers at wavelengths greater than 2.5 µm

Jongjin Kim, Leon Shterengas, Ramon Martinelli, Gregory Belenky

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.528984

KEYWORDS: Quantum wells, Continuous wave operation, Semiconductor lasers, Temperature metrology, High power lasers, Pulsed laser operation, Gallium, Antimony, Laser damage threshold, Indium gallium arsenide antimonide

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Proceedings Article | 22 May 2002 Paper

Optical gain and loss in 3-um diode W lasers

Sergei Suchalkin, David Westerfeld, Dimitrii Donetski, Ramon Martinelli, Igor Vurgaftman, Jerry Meyer, Serge Luryi, Gregory Belenky

Proceedings Volume 4651, (2002) https://doi.org/10.1117/12.467946

KEYWORDS: Semiconductor lasers, Diodes, Temperature metrology, Mid-IR, Continuous wave operation, Laser optics, Optical pumping, Cladding, Active optics, Electrons

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Proceedings Article | 14 July 2000 Paper

Simulation of carrier dynamics in multiple-quantum-well lasers

Mark Hybertsen, Muhammad Alam, Gene Baraff, R. Kent Smith, Gleb Shtengel, C. Reynolds, Gregory Belenky

Proceedings Volume 3944, (2000) https://doi.org/10.1117/12.391454

KEYWORDS: Optical simulations, Quantum wells, Quantum optics, Modulation, Carrier dynamics, Semiconductor lasers, Diodes, Resistance, Monte Carlo methods, Picosecond phenomena

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Proceedings Article | 30 November 1999 Paper

New room temperature CW InGaAsSb/AlGaAsSb QW ridge diode lasers and their application to CO measurements near 2.3 um

Mikhail Maiorov, Jian Wang, Douglas Baer, Hao Lee, Gregory Belenky, Ronald Hanson, John Connolly, Dmitri Garbuzov

Proceedings Volume 3855, (1999) https://doi.org/10.1117/12.371275

KEYWORDS: Quantum wells, Semiconductor lasers, Carbon monoxide, Gas lasers, Continuous wave operation, Absorption, Indium gallium arsenide antimonide, Temperature metrology, Combustion, Switching

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In this work the spectral characteristics of a new type of mid-infrared diode laser are discussed and an application for CO trace gas detection is demonstrated. The InGaAsSb/AlGaAsSb QW diode lasers operating in the spectral range of 2.0 - 2.7 micrometer in continuous wave (CW) regime at room temperature (RT) were developed last year. Earlier, the spectral range of RT CW operation for diode lasers was limited by 2.0 - 2.1 micrometer. The extension of wavelength to 2.7 micrometer was achieved for InGaAsSb/AlGaAsSb quantum well (QW) lasers by employing for QWs new quasi-ternary InGaSb(As) compositions that are out of the miscibility gap for InGaAsSb materials. Single spatial mode ridge lasers emitting at 2.2 - 2.7 micrometer have parameters similar to those of the infrared lasers with (lambda) less than 2 micrometer widely used for spectroscopic application. At operating currents about 80 - 200 mA and temperatures up to +50 degrees Celsius, these lasers emit CW output power of several milliwatts. Investigation of the laser spectra has revealed the current and temperature ranges where a single longitudinal mode dominates with side mode suppression of 22 - 25 dB. The dominant mode can be tuned in wavelength by varying current or temperature. The lasers were used to record high-resolution CO absorption lineshapes (2v band near 2.3 micrometer) in a static cell (14.9-cm path). Probed CO transitions were selected for applications to in situ measurements in high- temperature combustion flows. In general, the measured CO absorption lineshapes agreed with theoretical Voigt profiles calculated using the HITRAN database to within 2%. For a minimum detectable absorbance of 0.01% and a 1-meter long path, the CO measurement sensitivity for the probed R30 transition near 2.302 micrometer was 5 - 10 ppm at 1000 K. This value is about two orders of magnitude better than the sensitivity reported for CO detection with conventional diode lasers that probe transitions in the 3v band near 1.56 micrometer.

Proceedings Article | 6 August 1999 Paper

Role of p-doping profile in InGaAsP multiquantum well lasers: comparison of simulation and experiment

Mark Hybertsen, Muhammad Alam, Gleb Shtengel, Gregory Belenky, C. Reynolds, Dmitri Donetsky, R. Kent Smith, Gene Baraff, Rudolf Kazarinov, James Wynn, L. Smith

Proceedings Volume 3625, (1999) https://doi.org/10.1117/12.356912

KEYWORDS: Optical simulations, Quantum wells, Doping, Scattering, Quantum optics, Modulation, Laser scattering, Semiconductor lasers, Photons, Diamond

Proceedings Article | 1 April 1999 Paper

2.3- to 2.7-um room-temperature cw operation of InGaAsSb/AlGaAsSb broad-contact and single-mode ridge-waveguide SCH-QW diode lasers

Dmitri Garbuzov, Raymond Menna, Mikhail Maiorov, Hao Lee, V. Khalfin, Louis DiMarco, David Capewell, Ramon Martinelli, Gregory Belenky, John Connolly

Proceedings Volume 3628, (1999) https://doi.org/10.1117/12.344538

KEYWORDS: Quantum wells, Continuous wave operation, Semiconductor lasers, Laser damage threshold, Temperature metrology, Waveguides, Pulsed laser operation, Waveguide lasers, Laser based displays

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Proceedings Article | 7 July 1998 Paper

Temperature dependencies of output characteristics of 1.3-um InGaAsP/InP lasers with different profiles of p-doping

Dmitri Donetsky, Gregory Belenky, Gleb Shtengel, C. Reynolds, Rudolf Kazarinov, Serge Luryi

Proceedings Volume 3283, (1998) https://doi.org/10.1117/12.316692

KEYWORDS: Doping, Interfaces, Temperature metrology, Laser damage threshold, Zinc, Active optics, Heterojunctions, Measurement devices, Quantum wells, Laser development

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Proceedings Article | 6 June 1997 Paper

Experimental study of physical parameters of semiconductor lasers

Gleb Shtengel, Paul Morton, Rudolf Kazarinov, David Ackerman, Mark Hybertsen, Gregory Belenky, C. Reynolds

Proceedings Volume 2994, (1997) https://doi.org/10.1117/12.275618

KEYWORDS: Refractive index, Optical testing, Semiconductor lasers, Transparency, Mirrors, Absorption, Temperature metrology, Active optics, Laser damage threshold, Plasma

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Proceedings Article | 1 May 1996 Paper

Effect of p-doping profile on performance of strained multiquantum well InGaAsP/InP lasers

Gregory Belenky, C. Reynolds, Rudolf Kazarinov, Venkat Swaminathan, Serge Luryi, John Lopata

Proceedings Volume 2693, (1996) https://doi.org/10.1117/12.238996

KEYWORDS: Electrons, Doping, Data modeling, Heterojunctions, Zinc, Temperature metrology, Quantum wells, Interfaces, Laser damage threshold, Waveguides

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Proceedings Article | 19 June 1995 Paper

Novel design of semiconductor lasers for optical communication

Rudolf Kazarinov, Gregory Belenky

Proceedings Volume 2399, (1995) https://doi.org/10.1117/12.212515

KEYWORDS: Waveguides, Quantum wells, Cladding, Refractive index, Laser development, Semiconductor lasers, Optical communications, Internal quantum efficiency, Absorption, Data modeling

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