Characterizing electron beam induced damage in metrology and inspection of advance devices

Abbas Mohtashami; Violeta Navarro; Hamed Sadeghian; Ilan Englard; Dror Shemesh; Nitin Singh Malik

doi:10.1117/12.2279707

28 September 2017 Characterizing electron beam induced damage in metrology and inspection of advance devices

Abbas Mohtashami, Violeta Navarro, Hamed Sadeghian, Ilan Englard, Dror Shemesh, Nitin Singh Malik

Proceedings Volume 10446, 33rd European Mask and Lithography Conference; 104460U (2017) https://doi.org/10.1117/12.2279707
Event: 33rd European Mask and Lithography Conference, 2017, Dresden, Germany

Abstract

Using the electron beam (e-beam) as an advanced metrology tool in semiconductor manufacturing technologies has attracted many interests in the recent years. Owing to its high resolution and transparency to a wide range of materials including the metals, the e-beam shows a great promise to be used individually or in combination with the current optical metrology techniques in semiconductor industries. However, the e-beam can cause damages to the materials under inspection due to its relatively high energy. Therefore, determining the amount and type of damage as a result of the e-beam exposure is critical. Here, we present scanning probe microscopy techniques with the capability of measuring the e-beam induced damages on various materials. The experimental results of the e-beam induced damages on 300 mm silicon wafers covered by 1) patterned low-k material and 2) patterned low-k material filled with copper metal after chemical-mechanical polishing treatment are discussed. This method can be considered as a complementary approach to e-beam to ensure minimizing damage to the features.

Citation Download Citation

Abbas Mohtashami, Violeta Navarro, Hamed Sadeghian, Ilan Englard, Dror Shemesh, and Nitin Singh Malik "Characterizing electron beam induced damage in metrology and inspection of advance devices", Proc. SPIE 10446, 33rd European Mask and Lithography Conference, 104460U (28 September 2017); https://doi.org/10.1117/12.2279707

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