Mr. Ilan Englard Profile

Ilan Englard

EU Cooperative Project Manager

SPIE Involvement:

Author

Publications (26)

Proceedings Article | 2 August 2018 Presentation + Paper

Presentation + Paper

A holistic metrology sensitivity study for pattern roughness quantification on EUV patterned device structures with mask design induced roughness

Shimon Levi, Ishai Swrtsband, Vladislav Kaplan, Ilan Englard, Kurt Ronse, Bogumila Kutrzeba-Kotowska , Gaoliang Dai, Frank Scholze, Kenslea Anne, Hayley Johanesen, Laurens Kwakman, Igor Turovets, Maxim Rabinovitch, Sven Krannich, Nikolai Kasper, Brid Connolly, Romy Wende, Markus Bender

Proceedings Volume 10585, 1058511 (2018) https://doi.org/10.1117/12.2297265

KEYWORDS: Metrology, Extreme ultraviolet, Photomasks, Semiconducting wafers, Signal processing, Transmission electron microscopy, Atomic force microscopy, Etching

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Proceedings Article | 28 September 2017 Paper

Paper

Characterizing electron beam induced damage in metrology and inspection of advance devices

Abbas Mohtashami, Violeta Navarro, Hamed Sadeghian, Ilan Englard, Dror Shemesh, Nitin Singh Malik

Proceedings Volume 10446, 104460U (2017) https://doi.org/10.1117/12.2279707

KEYWORDS: Semiconducting wafers, Metrology, Inspection, Electron beams, Scanning probe microscopy, Overlay metrology, Dielectrics, Back end of line, Photomasks, Defect inspection, Copper low-k interconnects

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Proceedings Article | 17 April 2012 Paper

Paper

PSM and thin OMOG reticles aerial imaging metrology comparison study

Yaron Cohen, Jo Finders, Shmoolik Mangan, Ilan Englard, Orion Mouraille, Maurice Janssen, Junji Miyazaki, Brid Connolly, Yosuke Kojima, Masaru Higuchi

Proceedings Volume 8352, 83520H (2012) https://doi.org/10.1117/12.919791

KEYWORDS: Photomasks, Semiconducting wafers, Metrology, Scanners, Reticles, Critical dimension metrology, Airborne remote sensing, Optical proximity correction, Phase shifts, Integrated circuit design

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Proceedings Article | 16 April 2012 Paper

Paper

Impact of reticle absorber on the imaging properties in ArFi lithography

Jo Finders, O. Mouraille, A. Bouma, A. Ngai, K. Grim, J. van Praagh, C. Toma, J. Miyazaki, M. Higuchi, Y. Kojima, B. Connolly, I. Englard, Y. Cohen, S. Mangan, Michael Ben Yishai, Karine Jullian

Proceedings Volume 8352, 83520G (2012) https://doi.org/10.1117/12.918018

KEYWORDS: Reticles, Photomasks, Semiconducting wafers, Critical dimension metrology, Scanners, Lithography, Metrology, Scatterometry, Immersion lithography, Logic

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Proceedings Article | 4 April 2012 Paper

Paper

ArFi lithogrphy optimization for thin OMOG reticle with fast aerial imaging

Yaron Cohen, Jo Finders, Shmoolik Mangan, Ilan Englard, Orion Mouraille, Maurice Janssen, Junji Miyazaki, Brid Connolly, Yosuke Kojima, Masaru Higuchi

Proceedings Volume 8324, 83240B (2012) https://doi.org/10.1117/12.918049

KEYWORDS: Photomasks, Semiconducting wafers, Scanners, Reticles, Critical dimension metrology, Lithography, Metrology, Calibration, Airborne remote sensing, 3D metrology

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Proceedings Article | 24 January 2012 Paper

Paper

Study of EUV mask e-beam inspection conditions for HVM

Shmoolik Mangan, C. C. Lin, Greg Hughes, Ran Brikman, Alex Goldenshtein, Vlad Kudriashov, Alon Litman, Lior Shoval, Ilan Englard

Proceedings Volume 8166, 816631 (2012) https://doi.org/10.1117/12.898854

KEYWORDS: Inspection, Reflectivity, Extreme ultraviolet, Photomasks, Scanning electron microscopy, Contamination, Scattering, Extreme ultraviolet lithography, Semiconducting wafers, Multilayers

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Proceedings Article | 24 January 2012 Paper

Paper

Study of EUV mask e-beam inspection conditions for HVM

Shmoolik Mangan, C. C. Lin, Greg Hughes, Ran Brikman, Alex Goldenshtein, Vladislav Kudriashov, Alon Litman, Lior Shoval, Ilan Englard

Proceedings Volume 8166, 816612 (2012) https://doi.org/10.1117/12.899067

KEYWORDS: Inspection, Reflectivity, Extreme ultraviolet, Photomasks, Scanning electron microscopy, Contamination, Scattering, Extreme ultraviolet lithography, Semiconducting wafers, Multilayers

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SPIE Journal Paper | 1 October 2011

Toward 22 nm: fast and effective intrafield monitoring and optimization of process windows and critical dimension uniformity

Christopher Bencher, Jo Finders, Ilan Englard, Yaron Cohen, Amir Sagiv, Michael Ben-Yishai, Shmoolik Mangan, Huixiong Dai, Chris Ngai, Kfir Dotan, Roel Knops, Orion Mouraille, Evert Mos, Alexander Kremer

JM3, Vol. 10, Issue 04, 043003, (October 2011) https://doi.org/10.1117/12.10.1117/1.3641409

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Lithography, Metrology, Inspection, Scanners, Optimization (mathematics), Double patterning technology, Wavefronts

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Proceedings Article | 20 April 2011 Paper

Paper

Towards 22 nm: fast and effective intra-field monitoring and optimization of process windows and CDU

Yaron Cohen, Jo Finders, Roel Knops, Orion Mouraille, Ingrid Minnaert-Janssen, Frank Duray, Evert Mos, Alexander Kremer, Amir Sagiv, Shmoolik Mangan, Michael Ben Yishay, Huixiong Dai, Christopher Bencher, Christopher Ngai, Kfir Dotan, Ilan Englard

Proceedings Volume 7971, 79711N (2011) https://doi.org/10.1117/12.881657

KEYWORDS: Photomasks, Semiconducting wafers, Metrology, Lithography, Critical dimension metrology, Scanners, Inspection, Double patterning technology, Optimization (mathematics), Wavefronts

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Proceedings Article | 29 November 2010 Paper

Paper

EUV mask defectivity study by existing DUV tools and new e-beam technology

Shmoolik Mangan, Rik Jonckheere, Dieter Van Den Heuvel, Moshe Rozentsvige, Vladislav Kudriashov, Ran Brikman, Lior Shoval, Gaetano Santoro, Ilan Englard

Proceedings Volume 7823, 78232A (2010) https://doi.org/10.1117/12.864351

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Wafer inspection, Defect detection, Extreme ultraviolet, Printing, Deep ultraviolet, Reticles, Bismuth

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Proceedings Article | 29 November 2010 Paper

Paper

IntenCD and mask phase uniformity

Yaron Cohen, Shmoolik Mangan, Shay Attal, Michael Ben-Yishay, Ilan Englard

Proceedings Volume 7823, 78233I (2010) https://doi.org/10.1117/12.864362

KEYWORDS: Photomasks, Scanning electron microscopy, Semiconducting wafers, Reticles, Critical dimension metrology, Phase measurement, Data modeling, Scanners, Inspection, Statistical analysis

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Proceedings Article | 2 April 2010 Paper

Paper

Scanner qualification with IntenCD based reticle error correction

Yair Elblinger, Jo Finders, Marcel Demarteau, Onno Wismans, Ingrid Minnaert Janssen, Frank Duray, Michael Ben Yishai, Shmoolik Mangan, Yaron Cohen, Ziv Parizat, Shay Attal, Netanel Polonsky, Ilan Englard

Proceedings Volume 7638, 763835 (2010) https://doi.org/10.1117/12.848334

KEYWORDS: Photomasks, Scanners, Critical dimension metrology, Reticles, Semiconducting wafers, Scanning electron microscopy, Airborne remote sensing, Calibration, Acquisition tracking and pointing, Metrology

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Proceedings Article | 2 April 2010 Paper

Paper

Aerial imaging qualification and metrology for source mask optimization

Amir Sagiv, Jo Finders, Robert Kazinczi, Andre Engelen, Frank Duray, Ingrid Minnaert-Janssen, Shmoolik Mangan, Dror Kasimov, Ilan Englard

Proceedings Volume 7638, 763830 (2010) https://doi.org/10.1117/12.848376

KEYWORDS: Source mask optimization, Photomasks, Lithography, Semiconducting wafers, Airborne remote sensing, Cadmium, Inspection, Critical dimension metrology, Metrology, Finite element methods

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Proceedings Article | 28 October 2009 Paper

Paper

IntenCD technology for fast and accurate scanner performance determination

Ziv Parizat, Jo Finders, Marcel Demarteau, Onno Wissmans, Ingrid Minaert Janssen, Frank Duray, Michael Ben Yishai, Shmoolik Mangan, Yaron Cohen, Yair Elblinger, Lev Faivishevsky, Netanel Polonsky, Tal Verdene, Ilan Englard

Proceedings Volume 7488, 74881P (2009) https://doi.org/10.1117/12.833467

KEYWORDS: Photomasks, Scanners, Critical dimension metrology, Semiconducting wafers, Reticles, Scanning electron microscopy, Airborne remote sensing, Calibration, Acquisition tracking and pointing, Metrology

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Proceedings Article | 28 October 2009 Paper

Paper

Mask inspection placement maps for improving overlay

Ziv Parizat, Robert de Kruif, Jo Finders, Ingrid Minnaert-Janssen, Frank Duray, Michael Ben Yishai, Shmoolik Mangan, Yaron Cohen, Ilan Englard

Proceedings Volume 7488, 74883Q (2009) https://doi.org/10.1117/12.848401

KEYWORDS: Photomasks, Reticles, Inspection, Image registration, Distance measurement, Scanners, Pellicles, Metrology, Overlay metrology, Semiconducting wafers

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Proceedings Article | 1 October 2009 Paper

Paper

Aerial imaging for source mask optimization: mask and illumination qualification

Amir Sagiv, Jo Finders, Robert Kazinczi, Andre Engelen, Frank Duray, Ingrid Minnaert-Janssen, Shmoolik Mangan, Dror Kasimov, Ilan Englard

Proceedings Volume 7488, 74880Z (2009) https://doi.org/10.1117/12.832724

KEYWORDS: Source mask optimization, Photomasks, Signal detection, Inspection, Airborne remote sensing, Lithography, Lithographic illumination, Critical dimension metrology, Scanners, Optical lithography

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Proceedings Article | 24 March 2009 Paper

Paper

Novel lithography approach using feed-forward mask-based wafer CDU correction increase fab productivity and yield

Shmoolik Mangan, Erik Byers, Dan Rost, Mike Garrett, Merri Carlson, Craig Hickman, Jo Finders, Paul Luehrmann, Robert Kazinczi, Ingrid Minnaert-Janssen, Frank Duray, Baukje Wisse, Nicole Schoumans, Liesbeth Reijnen, Thomas Theeuwes, Michael Ben-Yishai, Rachel Ren, Ryan Gibson, Lior Shoval, Yaron Cohen, Yair Elblinger, Ilan Englard

Proceedings Volume 7272, 72722B (2009) https://doi.org/10.1117/12.815415

KEYWORDS: Photomasks, Semiconducting wafers, Scanners, Lithography, Inspection, Critical dimension metrology, Yield improvement, Wafer-level optics, Metrology, Imaging systems

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The extension of ArF lithography through reduced k1, immersion and double patterning techniques makes lithography a difficult challenge. Currently, the concept of simple linear flow from design to functional photo-mask is being replaced by a more complex scheme of feedback and feed-forward loops which have become part of a complex computational lithography scheme. One such novel lithography concept, called "holistic lithography", was recently introduced by ASML, as a scheme that makes the lithography process a highly efficient solution for the scaled down geometries. This approach encourages efficient utilization of computational lithography and the use of feed-forward and feed-back critical dimension (CD) and overlay correction loops. As sub-nanometer feature dimensions are reached for 3x nodes, with k1 reaching the optics limitations, Mask error enhancement factor (MEEF) values grow fast, thus making mask uniformity fingerprint and degradation throughout its life time a significant factor in printed CDU on the wafer. Whereas the consensus is on the need for growing density of intra-field data, traditional critical dimension scanning electron microscope (CDSEM) Feed backward loops to the litho-cell become unsuitable due to the high density CD measurement requirements. Earlier publications proposed implementing the core of the holistic lithography concept by combining two technologies: Applied Material's IntenCD^TM and ASML DoseMapper . IntenCD metrology data is streamed in a feedforward fashion through DoseMapper and into the scanner, to create a dose compensation recipe which improves the overall CDU performance. It has been demonstrated that the IntenCD maps can be used to efficiently reduce intra-field printed CDU on printed wafers. In this paper we study the integration concept of IntenCD and DoseMapper in a production environment. We implement the feed-forward concept by feeding IntenCD inspection data into DoseMapper that is connected to ASML's TWSINCAN^TM XT:1900i scanner. We apply this concept on printed wafers and demonstrate significant reduction in intra-field CDU. This concept can effectively replace the feedback concept using send-ahead wafers and extensive CDSEM measurements. The result is a significant cost saving and fab productivity improvement. By routinely monitoring mask-based CDU, we propose that all photo-induced transmission degradation effects can be compensated through the same mechanism. The result would be longer intervals between cleans, improved mask lifetime, and better end of line device yield.

Proceedings Article | 24 March 2009 Paper

Paper

Aerial imaging for FABs: productivity and yield aspects

Ilan Englard, Yaron Cohen, Yair Elblinger, Shay Attal, Neil Berns, Lior Shoval, Michael Ben-Yishai, Shmoolik Mangan

Proceedings Volume 7272, 727228 (2009) https://doi.org/10.1117/12.815419

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, Critical dimension metrology, Airborne remote sensing, Scanners, Metrology, Yield improvement, Time metrology, Control systems

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The economy of wafer fabs is changing faster for 3x geometry requirements and below. Mask set and exposure tool costs are almost certain to increase the overall cost per die requiring manufacturers to develop productivity and yield improvements to defray the lithography cell economic burden. Lithography cell cost effectiveness can be significantly improved by increasing mask availability while reducing the amount of mask sets needed during a product life cycle. Further efficiency can be gained from reducing send-ahead wafers and qualification cycle time, and elimination of inefficient metrology. Yield is the overriding die cost modulator and is significantly more sensitive to lithography as a result of masking steps required to fabricate the integrated circuit. Thus, for productivity to increase with minimal yield risk, the sample space of reticle induced source of variations should be large, with shortest measurement acquisition time possible. This paper presents the latest introduction of mask aerial imaging technology for the fab, Aera2^TM for Lithography with IntenC^TM, as an enabler for efficient lithography manufacturing. IntenCD is a high throughput, high density mask-based critical dimension (CD) mapping technology, with the potential for increasing productivity and yield in a wafer production environment. Connecting IntenCD to a feed forward advance process control (APC) reduces significantly the amount of traditional CD metrology required for robust wafer CD uniformity (CDU) correction and increases wafer CD uniformity. This in turn improves the lithography process window and yield and contributes to cost reduction and cycle time reduction of new reticles qualification. Advanced mask technology has introduced a new challenge. Exposure to 193nm wavelength stimulates haze growth on the mask and imposes a regular cleaning schedule. Cleaning eventually causes mask degradation. Haze growth impacts mask CD uniformity and induce global transmission fingerprint variations. Furthermore, aggressive cleaning may damage the delicate sub-resolution assist features. IntenCD based CDU fingerprint correction can optimize the regular mask cleaning schedule, extending clean intervals therefore extending the overall mask life span. This mask availability enhancement alone reduces the amount of mask sets required during the product life cycle and potentially leads to significant savings to the fab. This mask availability enhancement alone reduces the amount of mask sets required during the product life cycle and leads to significant savings to the fab. In this paper we present three case studies from a wafer production fab and a mask shop. The data presented demonstrates clear productivity and yield enhancements. The data presented is the outcome of a range of new applications which became possible by integrating the recently introduced Applied Materials Aera2^TM for Lithography aerial imaging inspection tool with the litho cluster.

Proceedings Article | 19 May 2008 Paper

Paper

An IntenCD map of a reticle as a feed-forward input to DoseMapper

Michael Ben Yishai, Jo Finders, Robert Kazinczi, Arno Bleeker, Paul Luehrmann, Ingrid Janssen, Frank Duray, Lior Shoval, Christophe Couderc, Rich Piech, Noam Hillel, Ilan Englard

Proceedings Volume 7028, 70283H (2008) https://doi.org/10.1117/12.793124

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Reticles, Scanners, Metrology, Lithography, Inspection, Double patterning technology, Process control

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Proceedings Article | 25 March 2008 Paper

Paper

Novel approach for immersion lithography defectivity control to increase productivity

Ilan Englard, Raf Stegen, Peter Vanoppen, Ingrid Minnaert-Janssen, Ted der Kinderen, Erik van Brederode, Frank Duray, Jeroen Linders, Denis Ovchinnikov, Rich Piech, Claudio Masia, Noam Hillel, Erez Ravid, Ofer Rotlevi, Amir Wilde, Saar Shabtay, Zach Telor, Robert Schreutelkamp

Proceedings Volume 6922, 69223U (2008) https://doi.org/10.1117/12.776085

KEYWORDS: Inspection, Scanning electron microscopy, Semiconducting wafers, Photodynamic therapy, Polarization, Particles, Immersion lithography, Scanners, Deep ultraviolet, Image classification

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Proceedings Article | 24 March 2008 Paper

Paper

Accurate in-resolution level overlay metrology for multipatterning lithography techniques

Ilan Englard, Richard Piech, Claudio Masia, Noam Hillel, Liraz Gershtein, Dana Sofer, Ram Peltinov, Ofer Adan

Proceedings Volume 6922, 69221D (2008) https://doi.org/10.1117/12.776099

KEYWORDS: Overlay metrology, Critical dimension metrology, Lithography, Metrology, Process control, Scanners, Optical lithography, Double patterning technology, Semiconducting wafers, Monochromatic aberrations

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Proceedings Article | 5 April 2007 Paper

Paper

Metrology challenges for advanced lithography techniques

Ilan Englard, Peter Vanoppen, Jo Finders, Ingrid Minnaert-Janssen, Frank Duray, Jeroen Meessen, Gert-Jan Janssen, Ofer Adan, Liraz Gershtein, Ram Peltinov, Claudio Masia, Richard Piech

Proceedings Volume 6518, 65181G (2007) https://doi.org/10.1117/12.713455

KEYWORDS: Overlay metrology, Critical dimension metrology, Etching, Lithography, Monte Carlo methods, Scanning electron microscopy, Metrology, Semiconducting wafers, Reticles, Algorithm development

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Proceedings Article | 5 April 2007 Paper

Paper

Immersion-induced defect SEM-based library for fast baseline improvement and excursion

Ilan Englard, Raf Stegen, Erik Van Brederode, Peter Vanoppen, Ingrid Minnaert-Janssen, Frank Duray, Ted der Kinderen, Gazi Tanriseven, Inge Lamers, Mireia Blanco Mantecon, Lior Levin, Eitan Binyamini, Nurit Raccah, Shalev Dror, Eran Valfer, Ofer Rotlevi, Robert Schreutelkamp, Rich Piech

Proceedings Volume 6518, 65182G (2007) https://doi.org/10.1117/12.713466

KEYWORDS: Particles, Inspection, Scanning electron microscopy, Immersion lithography, Bridges, Library classification systems, Printing, Molecular bridges, Semiconducting wafers, Signal attenuation

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Proceedings Article | 5 April 2007 Paper

Paper

MacroCD contact ellipticity measurements for lithography tool qualification

Ilan Englard, Eelco van Setten, Gert-Jan Janssen, Peter Vanoppen, Ingrid Minnaert-Janssen, Frank Duray, Ofer Adan, Amit Moran, Liraz Gershtein, Ram Peltinov

Proceedings Volume 6518, 651837 (2007) https://doi.org/10.1117/12.713469

KEYWORDS: Monochromatic aberrations, Semiconducting wafers, Finite element methods, Process control, Lithography, Critical dimension metrology, Distortion, Control systems, Wafer testing, Manufacturing

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Proceedings Article | 24 March 2006 Paper

Paper

Advanced CDSEM matching methodology for OPC litho-cell-based matching verification

Ofer Adan, Hugo Cramer, Erik Van Brederode, Robert Schreutelkamp, Ilan Englard

Proceedings Volume 6152, 61522Q (2006) https://doi.org/10.1117/12.656445

KEYWORDS: Scanning electron microscopy, Semiconducting wafers, Optical proximity correction, Calibration, Critical dimension metrology, Metrology, Process control, Lithography, Contamination, Cadmium

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Proceedings Article | 2 June 2003 Paper

Paper

Enhancing yield and productivity with process control applications for contact and via module

Stefan Majoni, Ilan Englard

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485025

KEYWORDS: Process control, Lithography, Metrology, Finite element methods, Inspection, Optical lithography, Safety, Single photon emission computed tomography

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Showing 5 of 26 publications

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