Paper
5 April 2007 MacroCD contact ellipticity measurement for lithography tool qualification
Ilan Englard, Eelco van Setten, Gert-Jan Janssen, Peter Vanoppen, Ingrid Minnaert-Janssen, Frank Duray, Ofer Adan, Amit Moran, Liraz Gershtein, Ram Peltinov
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Abstract
Contact hole integrity is an important metric for IC manufacturers, which is reflected in tight ellipticity control as part of the lithography tool qualifications. The current ellipticity measurement methodology is very sensitive to random process variations of the contact hole shape. Determining ellipticity in a systematic manner poses a challenge on qualification productivity, as acquiring more data for statistical validity leads to unacceptably long measurement times. The introduction of the so-called MacroCD Vector measurement enables a single shot large sampling of contact holes, including vector calculation and averaging of all individual contact ellipticity results within the MacroCD measurement array. Based on these enhanced measurement features, it is shown that contact hole ellipticity can be determined with much higher accuracy while local, mostly process induced variations can be characterized simultaneously. This opens possibilities to study correlation between ellipticity and possible root causes in the litho process module.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ilan Englard, Eelco van Setten, Gert-Jan Janssen, Peter Vanoppen, Ingrid Minnaert-Janssen, Frank Duray, Ofer Adan, Amit Moran, Liraz Gershtein, and Ram Peltinov "MacroCD contact ellipticity measurement for lithography tool qualification", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 651837 (5 April 2007); https://doi.org/10.1117/12.713469
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Cited by 1 scholarly publication.
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KEYWORDS
Monochromatic aberrations

Semiconducting wafers

Finite element methods

Process control

Critical dimension metrology

Lithography

Distortion

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