Rigorous simulation of EUV mask pellicle

Yulu Chen; Xiangyu Zhou; Ulrich Klostermann; Lei Sun; Obert Wood II; Mariya Braylovska; Sajan Marokkey; Francis Goodwin

doi:10.1117/12.2280339

16 October 2017 Rigorous simulation of EUV mask pellicle

Yulu Chen, Xiangyu Zhou, Ulrich Klostermann, Lei Sun, Obert Wood II, Mariya Braylovska, Sajan Marokkey, Francis Goodwin

Proceedings Volume 10451, Photomask Technology 2017; 104510S (2017) https://doi.org/10.1117/12.2280339
Event: SPIE Photomask Technology and EUV Lithography, 2017, Monterey, California, United States

Abstract

Pellicles that satisfy transmission, emission, thermal, and mechanical requirements are highly desired for EUV high volume manufacturing. We present here the capability of integrating pellicles in the full flow of rigorous EUV lithography simulations. This platform allows us to investigate new coherence effects in EUV lithography when pellicle is used. Critical dimension uniformity and throughput loss due to pellicle defects and add-on particles are also analyzed. Our study provides theoretical insights into pellicle development and facilitates pellicle insertion in EUV lithography.

Citation Download Citation

Yulu Chen, Xiangyu Zhou, Ulrich Klostermann, Lei Sun, Obert Wood II, Mariya Braylovska, Sajan Marokkey, and Francis Goodwin "Rigorous simulation of EUV mask pellicle", Proc. SPIE 10451, Photomask Technology 2017, 104510S (16 October 2017); https://doi.org/10.1117/12.2280339

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