Presentation + Paper
19 March 2018 Self-aligned block and fully self-aligned via for iN5 metal 2 self-aligned quadruple patterning
Benjamin Vincent, Joern-Holger Franke, Aurelie Juncker, Frederic Lazzarino, Gayle Murdoch, Sandip Halder, Joseph Ervin
Author Affiliations +
Abstract
This paper assesses Self-Aligned Block (SAB) and Fully Self-Aligned Via (FSAV) approaches to patterning using a iN5 (imec node 5 nm) vehicle and Metal 2 Self-Aligned Quadruple Patterning. We analyze SAB printability in the lithography process using process optimization, and demonstrate the effect of SAB on patterning yield for a (8 M2 lines x 6 M1 lines x 6 Via) structure. We show that FSAV, compared to standard Via patterning, has no beneficial impact but prevents dielectric breakdown between two adjacent M1 lines.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Benjamin Vincent, Joern-Holger Franke, Aurelie Juncker, Frederic Lazzarino, Gayle Murdoch, Sandip Halder, and Joseph Ervin "Self-aligned block and fully self-aligned via for iN5 metal 2 self-aligned quadruple patterning", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830W (19 March 2018); https://doi.org/10.1117/12.2298761
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CITATIONS
Cited by 3 scholarly publications and 1 patent.
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KEYWORDS
Optical lithography

Lithography

Metals

Resistance

Process control

Monte Carlo methods

Critical dimension metrology

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