Tracking the defects of ultra-thin HfO2 using a Cody-Lorentz multiple oscillator model

Dawei Hu; Aaron J. Rosenberg; Houssam Chouaib; Natalia Malkova; Zhengquan Tan

doi:10.1117/12.2296980

13 March 2018 Tracking the defects of ultra-thin HfO₂ using a Cody-Lorentz multiple oscillator model

Dawei Hu, Aaron J. Rosenberg, Houssam Chouaib, Natalia Malkova, Zhengquan Tan

Proceedings Volume 10585, Metrology, Inspection, and Process Control for Microlithography XXXII; 105852Y (2018) https://doi.org/10.1117/12.2296980
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

Defects in ultra-thin films appear as small perturbations in the measured optical dispersion using spectroscopic ellipsometry (SE). A common approach for quantifying these defects is to fit each pixel in the dispersion to an index of refraction and extinction coefficient for a known material thickness (point-by-point method). However, this point-bypoint method is not physical because it produces dispersions that are not Kramers-Kronig consistent and it is also subject to overfitting. In this work, we demonstrate that the Kramers-Kronig consistent Cody Lorentz Multiple-Oscillator model (CLM) can precisely quantify defects in HfO₂ using the Lorentz peak amplitude dispersion parameter as one of the fitting parameters. Using a KLA-Tencor spectroscopic ellipsometer, we collected optical dispersions of ultra-thin HfO₂ grown on SiO₂ for a variety of growth parameters including HfO₂ thickness, SiO₂ thickness, and anneal time, and then have used CLM to quantify the defects. The HfO₂ defect value was found to successfully track the different growth conditions, which is consistent with literature, and the defect values have little within-wafer variance. Quantifying defects in a material sub-bandgap successfully will provide information about leakage currents and device performance for gated semiconductor devices.

Citation Download Citation

Dawei Hu, Aaron J. Rosenberg, Houssam Chouaib, Natalia Malkova, and Zhengquan Tan "Tracking the defects of ultra-thin HfO₂ using a Cody-Lorentz multiple oscillator model", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105852Y (13 March 2018); https://doi.org/10.1117/12.2296980

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KEYWORDS

Hybrid fiber optics

Semiconducting wafers

Annealing

Dielectrics

Magnesium

Oscillators

Silicon

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