Paper
12 January 2018 Size and shape dependent optical properties of InAs quantum dots
Ali Imran, Jianliang Jiang, Deborah Eric, Muhammad Yousaf
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Abstract
In this study Electronic states and optical properties of self assembled InAs quantum dots embedded in GaAs matrix have been investigated. Their carrier confinement energies for single quantum dot are calculated by time-independent Schrödinger equation in which hamiltonianian of the system is based on effective mass approximation and position dependent electron momentum. Transition energy, absorption coefficient, refractive index and high frequency dielectric constant for spherical, cylindrical and conical quantum dots with different sizes in different dimensions are calculated. Comparative studies have revealed that size and shape greatly affect the electronic transition energies and absorption coefficient. Peaks of absorption coefficients have been found to be highly shape dependent.
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Ali Imran, Jianliang Jiang, Deborah Eric, and Muhammad Yousaf "Size and shape dependent optical properties of InAs quantum dots", Proc. SPIE 10622, 2017 International Conference on Optical Instruments and Technology: Micro/Nano Photonics: Materials and Devices, 1062209 (12 January 2018); https://doi.org/10.1117/12.2286297
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Cited by 7 scholarly publications.
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KEYWORDS
Absorption

Indium arsenide

Quantum dots

Refractive index

Dielectrics

Optical properties

Gallium arsenide

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