Electronic, optical properties, and effective masses of AlxGa1−xAs and InyGa1−yAs based on the first principle

Congcong Wang; Chong Li; Xuesheng Liu; Tian Lan; Guangzheng Zhou; Jing Li; Rui Huang; Ying Li; Zhiyong Wang

doi:10.1117/12.2542227

20 December 2019 Electronic, optical properties, and effective masses of Al_xGa_1−xAs and In_yGa_1−yAs based on the first principle

Congcong Wang, Chong Li, Xuesheng Liu, Tian Lan, Guangzheng Zhou, Jing Li, Rui Huang, Ying Li, Zhiyong Wang

Author Affiliations +

Proceedings Volume 11209, Eleventh International Conference on Information Optics and Photonics (CIOP 2019); 1120904 (2019) https://doi.org/10.1117/12.2542227
Event: Eleventh International Conference on Information Optics and Photonics (CIOP 2019), 2019, Xi'an, China

Abstract

The band structure, density of states, optical properties, effective masses and loss function of Al_xGa_1−xAs and In_yGa_1−yAs were performed by the first-principles method within the local density approximation. The calculated direct band gap of the AlAs, Al_0.5Ga_0.5As, GaAs, In_0.5Ga_0.5As and InAs were 1.608 eV, 1.34eV, 1.02eV, 0.646eV and 0.316eV at G point, which were direct bandgap semiconductor materials. In addition, dielectric functions, the absorption function, refractive index, loss function and effective mass were analyzed in detail. The effective masses of Al_xGa_1−xAs and In_yGa_1−yAs were small, so they have high carrier mobility. These results make them to be promising candidates for future electronics.

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Congcong Wang, Chong Li, Xuesheng Liu, Tian Lan, Guangzheng Zhou, Jing Li, Rui Huang, Ying Li, and Zhiyong Wang "Electronic, optical properties, and effective masses of Al_xGa_1−xAs and In_yGa_1−yAs based on the first principle", Proc. SPIE 11209, Eleventh International Conference on Information Optics and Photonics (CIOP 2019), 1120904 (20 December 2019); https://doi.org/10.1117/12.2542227

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