Paper
11 October 2018 New resist and underlayer approaches toward EUV lithography
Juha Rantala, Thomas Gädda, Markus Laukkanen, Luong Nguyen Dang, Kimmo Karaste, Dimitrios Kazazis, Yasin Ekinci
Author Affiliations +
Abstract
Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) is the most promising candidate to pattern the finest features in the next-generation integrated circuit manufacturing. Chemically-amplified resists (CARs) have long been used as state-of-the art photoresists and have been considered as EUV resist. Recently, inorganic and metal-containing resist materials have received significant attention in both academia and industry areas, with the aim to improve the resist performance in terms of resist resolution (R), line-edge roughness (LER), and sensitivity (S) to solve the well-known RLS trade-off. However, the resists reported to date usually have either problem in terms of RLS trade-off or pose metal contamination, which is a serious issue in expensive EUV equipment. Differently, in this report, we demonstrate our recent success in the development of the photochemistry of silicon compounds and resist formulations to obtain novel EUV negative tone resists with high resolution (up to 22nm pitch line/space patterns), low line-edge roughness (1-3nm) with reasonable EUV sensitivity. We also discuss their high etch selectivity to a PiBond’s SOC organic underlayer, which enable a bilayer lithography stack for EUVL patterning. Their excellent etch performances by RIE plasma is also reported.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Juha Rantala, Thomas Gädda, Markus Laukkanen, Luong Nguyen Dang, Kimmo Karaste, Dimitrios Kazazis, and Yasin Ekinci "New resist and underlayer approaches toward EUV lithography", Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 108090X (11 October 2018); https://doi.org/10.1117/12.2503107
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications and 3 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Extreme ultraviolet lithography

Etching

Extreme ultraviolet

Electron beam lithography

System on a chip

Coating

Silicon

Back to Top