Lateral shearing interferometry for high-NA EUV wavefront metrology

Wenhua Zhu; Ryan Miyakawa; Lei Chen; Patrick Naulleau

doi:10.1117/12.2501989

9 October 2018 Lateral shearing interferometry for high-NA EUV wavefront metrology

Wenhua Zhu, Ryan Miyakawa, Lei Chen, Patrick Naulleau

Proceedings Volume 10809, International Conference on Extreme Ultraviolet Lithography 2018; 108091S (2018) https://doi.org/10.1117/12.2501989
Event: SPIE Photomask Technology + Extreme Ultraviolet Lithography, 2018, Monterey, California, United States

Abstract

We present a lateral shearing interferometer suitable for high-NA EUV wavefront metrology. In this interferometer, a geometric model is used to accurately characterize and predict systematic errors that come from performing interferometry at high NA. This interferometer is compatible with various optical geometries, including systems where the image plane is tilted with respect to the optical axis, as in the Berkeley MET5. Simulation results show that the systematic errors in tilted geometries can be reduced by aligning the shearing interferometer grating and detector parallel to the image plane. Subsequent residual errors can be removed by linear fitting.

Conference Presentation

Citation Download Citation

Wenhua Zhu, Ryan Miyakawa, Lei Chen, and Patrick Naulleau "Lateral shearing interferometry for high-NA EUV wavefront metrology", Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 108091S (9 October 2018); https://doi.org/10.1117/12.2501989

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