Applying a technique inspired by super-resolution imaging, it is possible to achieve sub-diffraction limited linewidths in far-field photolithography. Using interference lithography as a demonstration platform, and exposing with a wavelength of 364 nm, we demonstrate high fidelity 50 nm features. Furthermore, these features are written over a large area with high uniformity and repeatability. As only off-the-shelf photoresists are used, this method is compatible with existing cleanrooms and adaptable to some existing lithography tool sets. We develop a model to analyze the lithographic process. From this model we show that there are fundamental limits imposed by both the optics and the photoresist. Also from the model, we demonstrate how to deterministically control sub-diffraction linewidths. Next, we analyze the design of an interference lithography tool. As sub-diffraction performance is in part limited by the aerial image quality, we consider the effects of component selection and alignment on final lithographic patterns. Additionally, we analyze the lithographic errors introduced, for example by wavefront distortion. Experimental verification is given for the analysis. Unique to this demonstration, a refractive beam shaper is employed to allow uniform exposure over a large area without sacrificing power. To our knowledge this is one of the first experimental demonstrations of a beam shaper in interferometric lithography.
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